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Volumn 99, Issue 1, 2006, Pages

Demonstration and analysis of reduced reverse-bias leakage current via design of nitride semiconductor heterostructures grown by molecular-beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE SCREW DISLOCATIONS; EPITAXIAL LAYER STRUCTURE; REDUCED REVERSE-BIAS LEAKAGE CURRENT; SCHOTTKY CONTACTS;

EID: 30844467317     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2150591     Document Type: Article
Times cited : (13)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.