Rectifying properties of p-GaN nanowires and an n-silicon heterojunction vertical diode

ACS Applied Materials and Interfaces

Volumn 2, Issue 12, 2010, Pages 3539-3543

  Manna, Sujit ^a   Ashok, Vishal D ^a   De, S K ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

breakdown voltage; graded junction; Heterojunction; ideality factor; recombination; rectification ratio

Indexed keywords

BREAKDOWN VOLTAGE; GRADED JUNCTION; IDEALITY FACTORS; RECOMBINATION; RECTIFICATION RATIO;

DISTILLATION; ELECTRIC BREAKDOWN; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; NANOWIRES; PALLADIUM; SEMICONDUCTING SILICON COMPOUNDS;

ELECTRIC RECTIFIERS;

GALLIUM; GALLIUM NITRIDE; NANOMATERIAL;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTRODE; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRODES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; MATERIALS TESTING; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTORS;

EID: 79151481686     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am100712h     Document Type: Article

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