Heteroepitaxial growth of GaN/Si (111) junctions in ammonia-free atmosphere: Charge transport, optoelectronic, and photovoltaic properties

Journal of Applied Physics

Volumn 113, Issue 12, 2013, Pages

  Saron, K M A ^a   Hashim, M R ^a   Allam, Nageh K ^b,c  

^a SCHOOL OF PHYSICS   (Malaysia)

^b The American University in Cairo   (Egypt)

^c NATIONAL RESEARCH CENTRE   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CONCENTRATION; ENERGY DISPERSIVE X-RAY; GALLIUM NITRIDES (GAN); HALL EFFECT MEASUREMENT; HETEROJUNCTION SOLAR CELLS; PHOTOLUMINESCENCE SPECTRUM; PHOTOVOLTAIC PROPERTY; RECTIFYING BEHAVIORS;

DEPOSITS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; EPITAXIAL GROWTH; FABRICATION; GALLIUM ALLOYS; HETEROJUNCTIONS; INTERFACES (MATERIALS); NANOSTRUCTURES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SILICON; SOLAR CELLS; SUBSTRATES; THERMAL EVAPORATION;

GALLIUM NITRIDE;

EID: 84875785269     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4798266     Document Type: Article

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