-
3
-
-
0037197433
-
Substrates for gallium nitride epitaxy
-
L. Liu, and J.H. Edgar Substrates for gallium nitride epitaxy Mater. Sci. Eng. R 37 3 2002 61
-
(2002)
Mater. Sci. Eng. R
, vol.37
, Issue.3
, pp. 61
-
-
Liu, L.1
Edgar, J.H.2
-
4
-
-
0038481256
-
Bulk and homoepitaxial GaN-growth and characterizations
-
P.R. Hageman, V. Kirilyuk, W.H.M. Corbeek, J.L. Weyher, B. Lucznik, M. Bockowski, S. Porowski, and S. Muller Bulk and homoepitaxial GaN-growth and characterizations J. Cryst. Growth 255 2003 241
-
(2003)
J. Cryst. Growth
, vol.255
, pp. 241
-
-
Hageman, P.R.1
Kirilyuk, V.2
Corbeek, W.H.M.3
Weyher, J.L.4
Lucznik, B.5
Bockowski, M.6
Porowski, S.7
Muller, S.8
-
5
-
-
0032089895
-
Thick GaN layers grown by hydride vapor-phase epitaxy: Netero- versus homo-epitaxy
-
S. Porowski Thick GaN layers grown by hydride vapor-phase epitaxy: netero- versus homo-epitaxy J. Cryst. Growth 189/190 1998 153
-
(1998)
J. Cryst. Growth
, vol.189-190
, pp. 153
-
-
Porowski, S.1
-
6
-
-
0034516520
-
MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices
-
C. Krichner, V. Schwegler, F. Eberhard, M. Kamp, K.J. Ebeling, P. Pystawko, M. Leszczynski, I. Grzegory, and S. Porowski MOVPE homoepitaxy of high-quality GaN: crystal growth and devices Prog. Cryst. Growth Charact. 41 2000 57
-
(2000)
Prog. Cryst. Growth Charact.
, vol.41
, pp. 57
-
-
Krichner, C.1
Schwegler, V.2
Eberhard, F.3
Kamp, M.4
Ebeling, K.J.5
Pystawko, P.6
Leszczynski, M.7
Grzegory, I.8
Porowski, S.9
-
8
-
-
0036670127
-
Blue-Laser structures grown on bulk GaN crystals
-
P. Prystawko, R. Czernecki, M. Leszczynski, P. Perlin, P. Wisniewski, L. Dmowski, H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, G. Nowak, and S. Porowski Blue-Laser structures grown on bulk GaN crystals Phys. Stat. Sol. A 192 2 2002 320
-
(2002)
Phys. Stat. Sol. A
, vol.192
, Issue.2
, pp. 320
-
-
Prystawko, P.1
Czernecki, R.2
Leszczynski, M.3
Perlin, P.4
Wisniewski, P.5
Dmowski, L.6
Teisseyre, H.7
Suski, T.8
Grzegory, I.9
Bockowski, M.10
Nowak, G.11
Porowski, S.12
-
9
-
-
0000595682
-
Quantum dielectric theory of electronegativity in covalent systems. III. Pressure-temperature phase diagrams, heats of mixing, and distribution coefficients
-
J.A. Van Vechten Quantum dielectric theory of electronegativity in covalent systems. III. Pressure-temperature phase diagrams, heats of mixing, and distribution coefficients Phys. Rev. B 7 4 1973 1479
-
(1973)
Phys. Rev. B
, vol.7
, Issue.4
, pp. 1479
-
-
Van Vechten, J.A.1
-
11
-
-
0242667777
-
Congruent melting of gallium nitride at 6 GPa an its application to single crystal growth
-
W. Utsumi, H. Saitoh, H. Kaneko, T. Watanuki, K. Aoki, and O. Shimomura Congruent melting of gallium nitride at 6 GPa an its application to single crystal growth Nat. Mater. 2 2003 735
-
(2003)
Nat. Mater.
, vol.2
, pp. 735
-
-
Utsumi, W.1
Saitoh, H.2
Kaneko, H.3
Watanuki, T.4
Aoki, K.5
Shimomura, O.6
-
12
-
-
0001425875
-
High pressure crystallization of III-V nitrides
-
S. Porowski High pressure crystallization of III-V nitrides Acta Physica Polonica. 87 2 1995 295
-
(1995)
Acta Physica Polonica.
, vol.87
, Issue.2
, pp. 295
-
-
Porowski, S.1
-
14
-
-
0031637941
-
Material chemistry and bulk crystal growth of group III nitrides in supercritical ammonia
-
J.W. Kolis, S. Wilcenski, and R.A. Laudise Material chemistry and bulk crystal growth of group III nitrides in supercritical ammonia Mater. Res. Soc. Symp. Proc. 495 1998 367
-
(1998)
Mater. Res. Soc. Symp. Proc.
, vol.495
, pp. 367
-
-
Kolis, J.W.1
Wilcenski, S.2
Laudise, R.A.3
-
15
-
-
0037121706
-
Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN
-
B. Raghothamachar, W.M. Vetter, M. Dudley, R. Dalmau, R. Schelesser, Z. Sitar, E. Michaels, and J.W. Kolis Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN J. Cryst. Growth 246 2002 271
-
(2002)
J. Cryst. Growth
, vol.246
, pp. 271
-
-
Raghothamachar, B.1
Vetter, W.M.2
Dudley, M.3
Dalmau, R.4
Schelesser, R.5
Sitar, Z.6
Michaels, E.7
Kolis, J.W.8
-
20
-
-
35949005062
-
Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties
-
P. Perlin, I. Gorczyca, N.E. Christensen, I. Grzegory, H. Teisseyre, and T. Suski Pressure studies of gallium nitride: crystal growth and fundamental electronic properties Phys. Rev. B 45 23 1992 13307
-
(1992)
Phys. Rev. B
, vol.45
, Issue.23
, pp. 13307
-
-
Perlin, P.1
Gorczyca, I.2
Christensen, N.E.3
Grzegory, I.4
Teisseyre, H.5
Suski, T.6
-
21
-
-
0027541219
-
X-ray examination of GaN single crystals grown at high hydrostatic pressure
-
M. Leszczynski, I. Grzegory, and M. Bockowski X-ray examination of GaN single crystals grown at high hydrostatic pressure J. Cryst. Growth 126 1993 601
-
(1993)
J. Cryst. Growth
, vol.126
, pp. 601
-
-
Leszczynski, M.1
Grzegory, I.2
Bockowski, M.3
-
22
-
-
0027577004
-
Crystal growth of III-N compounds under high pressure of nitrogen
-
I. Grzegory, J. Jun, S. Krukowski, M. Bockowski, and S. Porowski Crystal growth of III-N compounds under high pressure of nitrogen Physica B. 185 1993 99
-
(1993)
Physica B.
, vol.185
, pp. 99
-
-
Grzegory, I.1
Jun, J.2
Krukowski, S.3
Bockowski, M.4
Porowski, S.5
-
23
-
-
0000170076
-
Growth and properties of single crystalline GaN substrates and homoepitaxial layers
-
S. Porowski Growth and properties of single crystalline GaN substrates and homoepitaxial layers Mater. Sci. Eng. B 44 1997 407
-
(1997)
Mater. Sci. Eng. B
, vol.44
, pp. 407
-
-
Porowski, S.1
-
24
-
-
0030681101
-
GaN crystal growth in increased volume high pressure reactors
-
S. Porowski, M. Bockowski, B. Lucznik, M. Wroblewski, S. Krukowski, I. Grzegory, M. Leszczynski, G. Nowak, K. Pakula, and J. Baranowski GaN crystal growth in increased volume high pressure reactors Mater. Res. Symp. Proc. 449 1997 35
-
(1997)
Mater. Res. Symp. Proc.
, vol.449
, pp. 35
-
-
Porowski, S.1
Bockowski, M.2
Lucznik, B.3
Wroblewski, M.4
Krukowski, S.5
Grzegory, I.6
Leszczynski, M.7
Nowak, G.8
Pakula, K.9
Baranowski, J.10
-
25
-
-
4043124723
-
Recent results in the crystal growth of GaN at high pressure
-
I. Grzegory, M. Bockowski, B. Lucznik, S. Krukowski, M. Wroblewski, and S. Porowski Recent results in the crystal growth of GaN at high pressure MRS Internet J. Nitride Semicond. Res. 1 1996 art 20
-
(1996)
MRS Internet J. Nitride Semicond. Res.
, vol.1
-
-
Grzegory, I.1
Bockowski, M.2
Lucznik, B.3
Krukowski, S.4
Wroblewski, M.5
Porowski, S.6
-
26
-
-
0035933082
-
High nitrogen pressure growth of GaN crystal and their applications for epitaxy of GaN-based structures
-
I. Grzegory High nitrogen pressure growth of GaN crystal and their applications for epitaxy of GaN-based structures Mater. Sci. Eng. B 82 2001 30
-
(2001)
Mater. Sci. Eng. B
, vol.82
, pp. 30
-
-
Grzegory, I.1
-
27
-
-
0037064942
-
High pressure crystallization of GaN for electronic applications
-
I. Grzegory High pressure crystallization of GaN for electronic applications J. Phys. Condens. Matter. 14 2002 11055
-
(2002)
J. Phys. Condens. Matter.
, vol.14
, pp. 11055
-
-
Grzegory, I.1
-
29
-
-
0030566226
-
The microstructure of gallium nitride monocrystals grown at high pressure
-
M. Leszczynski, I. Grzegory, H. Teisseyre, T. Suski, M. Bockowski, J. Jun, J.M. Baranowski, S. Porowski, and J. Dodmagala The microstructure of gallium nitride monocrystals grown at high pressure J. Cryst. Growth 169 1996 235
-
(1996)
J. Cryst. Growth
, vol.169
, pp. 235
-
-
Leszczynski, M.1
Grzegory, I.2
Teisseyre, H.3
Suski, T.4
Bockowski, M.5
Jun, J.6
Baranowski, J.M.7
Porowski, S.8
Dodmagala, J.9
-
30
-
-
0000098748
-
Observation of native Ga vacancies in GaN by positron annihilation
-
K. Saarinen, T. Laine, S. Kuisma, J. NissilS, P. Hautojäri, L. Dobrzynski, J.M. Baranowski, K. Pakula, R. Stepniewski, M. Wojdak, A. Wysmolek, T. Suski, M. Leszczynski, I. Grzegory, and S. Porowski Observation of native Ga vacancies in GaN by positron annihilation Phys. Rev. Lett. 79 16 1997 3030
-
(1997)
Phys. Rev. Lett.
, vol.79
, Issue.16
, pp. 3030
-
-
Saarinen, K.1
Laine, T.2
Kuisma, S.3
Nissils, J.4
Hautojäri, P.5
Dobrzynski, L.6
Baranowski, J.M.7
Pakula, K.8
Stepniewski, R.9
Wojdak, M.10
Wysmolek, A.11
Suski, T.12
Leszczynski, M.13
Grzegory, I.14
Porowski, S.15
-
33
-
-
84875096370
-
Characterization of GaN single crystals by defects-selective etching
-
J.L. Weyher, I. Match, G. Kamler, J. Borysiuk, and I. Grzegory Characterization of GaN single crystals by defects-selective etching Phys. Stat. Sol. C 3 2003 821
-
(2003)
Phys. Stat. Sol. C
, vol.3
, pp. 821
-
-
Weyher, J.L.1
Match, I.2
Kamler, G.3
Borysiuk, J.4
Grzegory, I.5
-
34
-
-
0035451649
-
Evidence of free carrier concentration along the c-axis for undoped GaN single crystals
-
E. Frassinet, W. Knap, S. Krukowski, P. Perlin, P. Wisniewski, T. Suski, I. Grzegory, and P. Porowski Evidence of free carrier concentration along the c-axis for undoped GaN single crystals J. Cryst. Growth 230 2001 442
-
(2001)
J. Cryst. Growth
, vol.230
, pp. 442
-
-
Frassinet, E.1
Knap, W.2
Krukowski, S.3
Perlin, P.4
Wisniewski, P.5
Suski, T.6
Grzegory, I.7
Porowski, P.8
-
35
-
-
0035828767
-
High nitrogen pressure growth of GaN single crystals: Doping and physical properties
-
S. Krukowski, M. Bockowski, B. Lucznik, I. Grzegory, S. Porowski, T. Suski, and M. Wroblewski High nitrogen pressure growth of GaN single crystals: doping and physical properties J. Phys. Condens. Matter. 13 2001 8881
-
(2001)
J. Phys. Condens. Matter.
, vol.13
, pp. 8881
-
-
Krukowski, S.1
Bockowski, M.2
Lucznik, B.3
Grzegory, I.4
Porowski, S.5
Suski, T.6
Wroblewski, M.7
-
37
-
-
0032089895
-
Bulk homoepitaxial GaN-growth characterization
-
S. Porowski Bulk homoepitaxial GaN-growth characterization J. Cryst. Growth 189/190 1998 153
-
(1998)
J. Cryst. Growth
, vol.189-190
, pp. 153
-
-
Porowski, S.1
-
39
-
-
0035451648
-
Optical and electrical properties of Be doped GaN bulk crystals
-
T. Suski, E. Litwin-STaszewska, P. Perlin, P. Wisnievski, H. Teisseyre, I. Grzegory, M. Bockowski, S. Porowski, K. Saarinen, and J. Nissila Optical and electrical properties of Be doped GaN bulk crystals J. Cryst. Growth 230 2001 368
-
(2001)
J. Cryst. Growth
, vol.230
, pp. 368
-
-
Suski, T.1
Litwin-Staszewska, E.2
Perlin, P.3
Wisnievski, P.4
Teisseyre, H.5
Grzegory, I.6
Bockowski, M.7
Porowski, S.8
Saarinen, K.9
Nissila, J.10
-
40
-
-
0035162032
-
Growth and doping of GaN and AlN single crystals under high pressure of nitrogen
-
M. Bockowski Growth and doping of GaN and AlN single crystals under high pressure of nitrogen Cryst. Res. Technol. 36 8-10 2001 771
-
(2001)
Cryst. Res. Technol.
, vol.36
, Issue.8-10
, pp. 771
-
-
Bockowski, M.1
-
42
-
-
19944419760
-
Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures
-
M. Bockowski, I. Grzegory, S. Krukowski, B. Lucznik, M. Wroblewski, G. Kamler, J. Borysiuk, P. Kwiatkowski, K. Jasik, and S. Porowski Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures J. Cryst. Growth 274 2005 55
-
(2005)
J. Cryst. Growth
, vol.274
, pp. 55
-
-
Bockowski, M.1
Grzegory, I.2
Krukowski, S.3
Lucznik, B.4
Wroblewski, M.5
Kamler, G.6
Borysiuk, J.7
Kwiatkowski, P.8
Jasik, K.9
Porowski, S.10
-
43
-
-
20744435043
-
Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method
-
M. Bockowski, I. Grzegory, J. Borysiuk, G. Kamler, B. Lucznik, M. Wroblewski, P. Kwiatkowski, K. Jasik, S. Krukowski, and S. Porowski Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method J. Cryst. Growth 281 2005 11
-
(2005)
J. Cryst. Growth
, vol.281
, pp. 11
-
-
Bockowski, M.1
Grzegory, I.2
Borysiuk, J.3
Kamler, G.4
Lucznik, B.5
Wroblewski, M.6
Kwiatkowski, P.7
Jasik, K.8
Krukowski, S.9
Porowski, S.10
-
44
-
-
20744443048
-
Defects in GaN single crystals and homoepitaxial structures
-
J.L. Weyher, G. Kamler, G. Nowak, J. Borysiuk, B. Lucznik, M. Krysko, I. Grzegory, and S. Porowski Defects in GaN single crystals and homoepitaxial structures J. Cryst. Growth 281 2005 135
-
(2005)
J. Cryst. Growth
, vol.281
, pp. 135
-
-
Weyher, J.L.1
Kamler, G.2
Nowak, G.3
Borysiuk, J.4
Lucznik, B.5
Krysko, M.6
Grzegory, I.7
Porowski, S.8
-
45
-
-
0033715101
-
Growth of bulk GaN single crystals by the pressure-controlled solution method
-
T. Inoue, Y. Seki, O. Oda, S. Kurai, Y. Yamada, and T. Taguchi Growth of bulk GaN single crystals by the pressure-controlled solution method Jpn. J. Appl. Phys. Part 1 39 4B 2000 2394
-
(2000)
Jpn. J. Appl. Phys. Part 1
, vol.39
, Issue.4
, pp. 2394
-
-
Inoue, T.1
Seki, Y.2
Oda, O.3
Kurai, S.4
Yamada, Y.5
Taguchi, T.6
-
46
-
-
0035398736
-
Growth of bulk GaN crystals by the pressure-controlled solution method
-
T. Inoue, Y. Seki, O. Oda, S. Kurai, Y. Yamada, and T. Taguchi Growth of bulk GaN crystals by the pressure-controlled solution method J. Cryst. Growth 229 2001 35
-
(2001)
J. Cryst. Growth
, vol.229
, pp. 35
-
-
Inoue, T.1
Seki, Y.2
Oda, O.3
Kurai, S.4
Yamada, Y.5
Taguchi, T.6
-
47
-
-
0035529135
-
Pressure-controlled solution growth of bulk GaN crystals under high pressure
-
T. Inoue, Y. Seki, O. Oda, S. Kurai, Y. Yamada, and T. Taguchi Pressure-controlled solution growth of bulk GaN crystals under high pressure Phys. Stat. Sol. B 223 15 2001 15
-
(2001)
Phys. Stat. Sol. B
, vol.223
, Issue.15
, pp. 15
-
-
Inoue, T.1
Seki, Y.2
Oda, O.3
Kurai, S.4
Yamada, Y.5
Taguchi, T.6
-
48
-
-
0032022835
-
Morphology and characterization of GaN single crystals grown in a Na flux
-
H. Yamane, M. Shimada, T. Sekiguchi, and F.J. Disalvo Morphology and characterization of GaN single crystals grown in a Na flux J. Cryst. Growth 186 1998 6
-
(1998)
J. Cryst. Growth
, vol.186
, pp. 6
-
-
Yamane, H.1
Shimada, M.2
Sekiguchi, T.3
Disalvo, F.J.4
-
49
-
-
0001416616
-
Polarity of GaN single crystals prepared with a Na flux
-
H. Yamane, M. Shimada, T. Endo, and F.J. Disalvo Polarity of GaN single crystals prepared with a Na flux Jpn. J. Appl. Phys. Part 1 37 6 1998 3436
-
(1998)
Jpn. J. Appl. Phys. Part 1
, vol.37
, Issue.6
, pp. 3436
-
-
Yamane, H.1
Shimada, M.2
Endo, T.3
Disalvo, F.J.4
-
50
-
-
0033209912
-
Crystal growth of GaN from Na-Ga melt in BN container
-
H. Yamane, D. Kinno, M. Shimada, and F.J. Disalvo Crystal growth of GaN from Na-Ga melt in BN container J. Ceram. Soc. Jap. 107 10 1999 925
-
(1999)
J. Ceram. Soc. Jap.
, vol.107
, Issue.10
, pp. 925
-
-
Yamane, H.1
Kinno, D.2
Shimada, M.3
Disalvo, F.J.4
-
51
-
-
0033875466
-
GaN single crystals from a Na-Ga melt
-
H. Yamane, D. Kinno, M. Shimada, T. Sekiguchi, and F.J. Disalvo GaN single crystals from a Na-Ga melt J. Mater. Sci. 35 2000 801
-
(2000)
J. Mater. Sci.
, vol.35
, pp. 801
-
-
Yamane, H.1
Kinno, D.2
Shimada, M.3
Sekiguchi, T.4
Disalvo, F.J.5
-
52
-
-
0034273269
-
2
-
2 J. Cryst. Growth 218 2000 7
-
(2000)
J. Cryst. Growth
, vol.218
, pp. 7
-
-
Aoki, M.1
Yamane, H.2
Shimada, M.3
Sekiguchi, T.4
Hanada, T.5
Yao, T.6
Sarayama, S.7
Disalvo, F.J.8
-
53
-
-
0001445104
-
Growth of 5 mm GaN single crystals at 750 °c from a Na-Ga melt
-
M. Aoki, H. Yamane, M. Shimada, S. Sarayama, and F.J. Disalvo Growth of 5 mm GaN single crystals at 750 °C from a Na-Ga melt Cryst. Growth Design 1 2 2001 119
-
(2001)
Cryst. Growth Design
, vol.1
, Issue.2
, pp. 119
-
-
Aoki, M.1
Yamane, H.2
Shimada, M.3
Sarayama, S.4
Disalvo, F.J.5
-
54
-
-
0036643610
-
GaN single crystals growth using high purity Na as a flux
-
M. Aoki, H. Yamane, M. Shimada, S. Sarayama, and F.J. Disalvo GaN single crystals growth using high purity Na as a flux J. Cryst. Growth 242 2002 70
-
(2002)
J. Cryst. Growth
, vol.242
, pp. 70
-
-
Aoki, M.1
Yamane, H.2
Shimada, M.3
Sarayama, S.4
Disalvo, F.J.5
-
55
-
-
0037121693
-
Optical characterization of bulk GaN grown by the Na-Ga melt technique
-
B.J. Shromme, K. Palle, C.D. Poweleit, H. Yamane, M. Aoki, and F.J. Disalvo Optical characterization of bulk GaN grown by the Na-Ga melt technique J. Cryst. Growth 246 2002 299
-
(2002)
J. Cryst. Growth
, vol.246
, pp. 299
-
-
Shromme, B.J.1
Palle, K.2
Poweleit, C.D.3
Yamane, H.4
Aoki, M.5
Disalvo, F.J.6
-
56
-
-
0002584762
-
Morphology and polarity of GaN single crystals synthesized by the a Na flux method
-
M. Aoki, H. Yamane, M. Shimada, T. Kajiwara, S. Sarayama, and F.J. Disalvo Morphology and polarity of GaN single crystals synthesized by the a Na flux method Cryst. Growth Design 2 1 2002 33
-
(2002)
Cryst. Growth Design
, vol.2
, Issue.1
, pp. 33
-
-
Aoki, M.1
Yamane, H.2
Shimada, M.3
Kajiwara, T.4
Sarayama, S.5
Disalvo, F.J.6
-
57
-
-
0033330444
-
Control of nucleation site and growth orientation of bulk GaN crystals
-
M. Yano, M. Okamoto, Y. Khin, M. Yoshimura, Y. Mori, and T. Sasaki Control of nucleation site and growth orientation of bulk GaN crystals Jpn. J. Appl. Phys. Part 2 38 10A 1999 L1121
-
(1999)
Jpn. J. Appl. Phys. Part 2
, vol.38
, Issue.10
-
-
Yano, M.1
Okamoto, M.2
Khin, Y.3
Yoshimura, M.4
Mori, Y.5
Sasaki, T.6
-
58
-
-
0037966868
-
Growth of large GaN single crystals using the liquid phase epitaxy (LPE) technique
-
F. Kawamura, T. Iwahashi, K. Omae, M. Morishita, M. Yoshimura, Y. Mori, and T. Sasaki Growth of large GaN single crystals using the liquid phase epitaxy (LPE) technique Jpn. J. Appl. Phys. Part 2 42 1A/B 2003 L4
-
(2003)
Jpn. J. Appl. Phys. Part 2
, vol.42
, Issue.1
-
-
Kawamura, F.1
Iwahashi, T.2
Omae, K.3
Morishita, M.4
Yoshimura, M.5
Mori, Y.6
Sasaki, T.7
-
59
-
-
0036530591
-
Effect of ammonia threshold pressure and seed growth for bulk GaN single crystals by Na flux method
-
T. Iwahashi, F. Kawamura, M. Morishita, Y. Kai, M. Yoshimura, Y. Mori, and T. Sasaki Effect of ammonia threshold pressure and seed growth for bulk GaN single crystals by Na flux method J. Cryst. Growth 237-239 2002 2112
-
(2002)
J. Cryst. Growth
, vol.237-239
, pp. 2112
-
-
Iwahashi, T.1
Kawamura, F.2
Morishita, M.3
Kai, Y.4
Yoshimura, M.5
Mori, Y.6
Sasaki, T.7
-
60
-
-
0141428840
-
Novel liquid phase epitaxy (LPE) growth method for growing large GaN single crystals: Introduction of the flux film coated-liquid phase epitaxy (FFC-LPE) method
-
F. Kawamura, M. Morishita, K. Omae, M. Yoshimura, Y. Mori, and T. Sasaki Novel liquid phase epitaxy (LPE) growth method for growing large GaN single crystals: introduction of the flux film coated-liquid phase epitaxy (FFC-LPE) method Jpn. J. Appl. Phys. Part 2 42 8A 2003 L879
-
(2003)
Jpn. J. Appl. Phys. Part 2
, vol.42
, Issue.8
-
-
Kawamura, F.1
Morishita, M.2
Omae, K.3
Yoshimura, M.4
Mori, Y.5
Sasaki, T.6
-
61
-
-
0036828185
-
Condition for seeded growth of GaN crystals by the Na flux method
-
M. Aoki, H. Yamane, M. Shimada, S. Sarayama, and F.J. Disalvo Condition for seeded growth of GaN crystals by the Na flux method Mater. Lett. 56 2002 660
-
(2002)
Mater. Lett.
, vol.56
, pp. 660
-
-
Aoki, M.1
Yamane, H.2
Shimada, M.3
Sarayama, S.4
Disalvo, F.J.5
-
62
-
-
1242265320
-
Dissolution and recrystallization of GaN in molten Na
-
M. Aoki, H. Yamane, M. Shimada, S. Sarayama, H. Iwata, and F.J. Disalvo Dissolution and recrystallization of GaN in molten Na Jpn. J. Appl. Phys. Part 1 42 12 2003 7272
-
(2003)
Jpn. J. Appl. Phys. Part 1
, vol.42
, Issue.12
, pp. 7272
-
-
Aoki, M.1
Yamane, H.2
Shimada, M.3
Sarayama, S.4
Iwata, H.5
Disalvo, F.J.6
-
64
-
-
0033880925
-
Growth of zinc-blend-type structure GaN from a Na-Ga melt
-
H. Yamane, M. Shimada, and F.J. Disalvo Growth of zinc-blend-type structure GaN from a Na-Ga melt Mater. Lett. 42 2000 66
-
(2000)
Mater. Lett.
, vol.42
, pp. 66
-
-
Yamane, H.1
Shimada, M.2
Disalvo, F.J.3
-
65
-
-
31944435325
-
Bulk GaN single crystal: Growth condition by flux method
-
Y. Song, W. Wang, W. Yuan, X. Wu, and X.L. Chen Bulk GaN single crystal: growth condition by flux method Mater. Res. Bull. 35 2000 2325
-
(2000)
Mater. Res. Bull.
, vol.35
, pp. 2325
-
-
Song, Y.1
Wang, W.2
Yuan, W.3
Wu, X.4
Chen, X.L.5
-
66
-
-
0041753936
-
Synthesis of bulk GaN single crystals using Na-Ca flux
-
F. Kawamura, M. Morishita, T. Iwahashi, M. Yoshimura, Y. Mori, and T. Sasaki Synthesis of bulk GaN single crystals using Na-Ca flux Jpn. J. Appl. Phys. Part 2 41 12B 2002 L1440
-
(2002)
Jpn. J. Appl. Phys. Part 2
, vol.41
, Issue.12
-
-
Kawamura, F.1
Morishita, M.2
Iwahashi, T.3
Yoshimura, M.4
Mori, Y.5
Sasaki, T.6
-
67
-
-
0042884433
-
Growth of transparent, large size GaN single crystals with low dislocations using Na-Ca flux system
-
F. Kawamura, T. Iwahashi, M. Morishita, K. Omae, M. Yoshimura, Y. Mori, and T. Sasaki Growth of transparent, large size GaN single crystals with low dislocations using Na-Ca flux system Jpn. J. Appl. Phys. Part 2 42 7A 2003 L729
-
(2003)
Jpn. J. Appl. Phys. Part 2
, vol.42
, Issue.7
-
-
Kawamura, F.1
Iwahashi, T.2
Morishita, M.3
Omae, K.4
Yoshimura, M.5
Mori, Y.6
Sasaki, T.7
-
68
-
-
0042266869
-
Growth of bulk GaN single crystals Li-Na mixed flux system
-
M. Morishita, F. Kawamura, T. Iwahashi, M. Yoshimura, Y. Mori, and T. Sasaki Growth of bulk GaN single crystals Li-Na mixed flux system Jpn. J. Appl. Phys. Part 2 42 6A 2003 L565
-
(2003)
Jpn. J. Appl. Phys. Part 2
, vol.42
, Issue.6
-
-
Morishita, M.1
Kawamura, F.2
Iwahashi, T.3
Yoshimura, M.4
Mori, Y.5
Sasaki, T.6
-
69
-
-
20844452684
-
Growth of GaN crystals from molten solution with Ga free solvent using a temperature gradient
-
B.N. Feigelson, and R.L. Henry Growth of GaN crystals from molten solution with Ga free solvent using a temperature gradient J. Cryst. Growth 281 2005 5
-
(2005)
J. Cryst. Growth
, vol.281
, pp. 5
-
-
Feigelson, B.N.1
Henry, R.L.2
-
70
-
-
0000194395
-
GaN synthesis by ammonothermal method
-
R. Dwilinski, A. Wysmolek, J. Baranowski, M. Kaminska, R. Doradzinski, J. Garczynski, and L. Sierzputowski GaN synthesis by ammonothermal method Acta Physica Polonica. 88 5 1995 833
-
(1995)
Acta Physica Polonica.
, vol.88
, Issue.5
, pp. 833
-
-
Dwilinski, R.1
Wysmolek, A.2
Baranowski, J.3
Kaminska, M.4
Doradzinski, R.5
Garczynski, J.6
Sierzputowski, L.7
-
71
-
-
1542607368
-
On GaN crystallization by ammonothermal method
-
R. Dwilinski, J. Baranowski, M. Kaminska, R. Doradzinski, J. Garczynski, and L. Sierzputowski On GaN crystallization by ammonothermal method Acta Physica Polonica. 90 4 1996 763
-
(1996)
Acta Physica Polonica.
, vol.90
, Issue.4
, pp. 763
-
-
Dwilinski, R.1
Baranowski, J.2
Kaminska, M.3
Doradzinski, R.4
Garczynski, J.5
Sierzputowski, L.6
-
72
-
-
0002373961
-
Exciton photo-luminescence of GaN bulk crystals grown by the AMMONO method
-
R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski, J. Baranowski, and M. Kaminska Exciton photo-luminescence of GaN bulk crystals grown by the AMMONO method Mater. Sci. Eng. B 50 1997 46
-
(1997)
Mater. Sci. Eng. B
, vol.50
, pp. 46
-
-
Dwilinski, R.1
Doradzinski, R.2
Garczynski, J.3
Sierzputowski, L.4
Baranowski, J.5
Kaminska, M.6
-
73
-
-
4043103307
-
Paramagnetic defects in GaN
-
M. Placzewska, B. Suchanek, R. Dwilinski, K. Pakua, A. Wagner, and M. Kaminska Paramagnetic defects in GaN MRS Internet J. Nitride Semicond. Res. 3 1998 article 45
-
(1998)
MRS Internet J. Nitride Semicond. Res.
, vol.3
-
-
Placzewska, M.1
Suchanek, B.2
Dwilinski, R.3
Pakua, K.4
Wagner, A.5
Kaminska, M.6
-
74
-
-
0006210133
-
A new route for the synthesis of nitrides: The solvothermale preparation of GaN
-
C. Collado, G. Demazeau, B. Berdeu, A. Largeteau, and W. Lai-Tiong A new route for the synthesis of nitrides: the solvothermale preparation of GaN High Pressure Res. 18 2000 221
-
(2000)
High Pressure Res.
, vol.18
, pp. 221
-
-
Collado, C.1
Demazeau, G.2
Berdeu, B.3
Largeteau, A.4
Lai-Tiong, W.5
-
75
-
-
2442592903
-
Single crystal growth of GaN by the temperature gradient Na flux-method
-
M. Aoki, H. Yamane, M. Shimada, S. Sarayama, H. Iwata, and F. DiSalvo Single crystal growth of GaN by the temperature gradient Na flux-method J. Cryst. Growth 266 2004 461
-
(2004)
J. Cryst. Growth
, vol.266
, pp. 461
-
-
Aoki, M.1
Yamane, H.2
Shimada, M.3
Sarayama, S.4
Iwata, H.5
Disalvo, F.6
-
76
-
-
0042331019
-
Modeling of ammothermal growth of nitrides
-
Q.S. Chen, V. Prasad, and W.R. Hu Modeling of ammothermal growth of nitrides J. Cryst. Growth 258 2003 181
-
(2003)
J. Cryst. Growth
, vol.258
, pp. 181
-
-
Chen, Q.S.1
Prasad, V.2
Hu, W.R.3
-
78
-
-
1342264159
-
Assessment of Li-Ga-N ternary system and GaN single crystal growth
-
W.J. Wang, X.L. Chen, Y.T. Song, W.X. Yuan, Y.G. Cao, and X. Wu Assessment of Li-Ga-N ternary system and GaN single crystal growth J. Cryst. Growth 264 2004 13
-
(2004)
J. Cryst. Growth
, vol.264
, pp. 13
-
-
Wang, W.J.1
Chen, X.L.2
Song, Y.T.3
Yuan, W.X.4
Cao, Y.G.5
Wu, X.6
-
79
-
-
15844408647
-
Growth of gallium nitride via fluid transport in supercritical ammonia
-
T. Hashimoto, K. Fujito, B.A. Haskell, P.T. Fini, J.S. Speck, and S. Nakamura Growth of gallium nitride via fluid transport in supercritical ammonia J. Cryst. Growth 275 2005 e525
-
(2005)
J. Cryst. Growth
, vol.275
-
-
Hashimoto, T.1
Fujito, K.2
Haskell, B.A.3
Fini, P.T.4
Speck, J.S.5
Nakamura, S.6
-
80
-
-
0035148166
-
Crystal growth of gallium nitride in supercritical ammonia
-
D.R. Ketchum, and J.W. Kolis Crystal growth of gallium nitride in supercritical ammonia J. Cryst. Growth 222 2001 431
-
(2001)
J. Cryst. Growth
, vol.222
, pp. 431
-
-
Ketchum, D.R.1
Kolis, J.W.2
-
81
-
-
0000670713
-
Ammonothermal synthesis of cubic gallium nitride
-
A.P. Purdy Ammonothermal synthesis of cubic gallium nitride Chem. Mater. 11 1999 1648
-
(1999)
Chem. Mater.
, vol.11
, pp. 1648
-
-
Purdy, A.P.1
-
82
-
-
0012624824
-
Ammonothermal recrystallization of gallium nitride with acidic mineralizer
-
A.P. Purdy Ammonothermal recrystallization of gallium nitride with acidic mineralizer Cryst. Growth Design 2 2 2002 141
-
(2002)
Cryst. Growth Design
, vol.2
, Issue.2
, pp. 141
-
-
Purdy, A.P.1
-
83
-
-
0037401642
-
Synthesis of GaN by high pressure ammonolysis of gallium triiodide
-
A.P. Purdy, A.C. Cas, and N. Muratore Synthesis of GaN by high pressure ammonolysis of gallium triiodide J. Cryst. Growth 252 2003 136
-
(2003)
J. Cryst. Growth
, vol.252
, pp. 136
-
-
Purdy, A.P.1
Cas, A.C.2
Muratore, N.3
-
84
-
-
2942650631
-
Growth of GaN crystals under ammonothermal conditions
-
M.J. Callahan, B. Wang, L.O. Bouthillette, S.Q. Wang, J.W. Kolis, and D.F. Bliss Growth of GaN crystals under ammonothermal conditions Mater. Res. Soc. Symp. Proc. 798 2004 y2. 10.1
-
(2004)
Mater. Res. Soc. Symp. Proc.
, vol.798
-
-
Callahan, M.J.1
Wang, B.2
Bouthillette, L.O.3
Wang, S.Q.4
Kolis, J.W.5
Bliss, D.F.6
-
85
-
-
0034635396
-
Zener model description of ferromagnetism in zinc-blende magnetic semiconductors
-
T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand Zener model description of ferromagnetism in zinc-blende magnetic semiconductors Science 2000 287
-
(2000)
Science
, pp. 287
-
-
Dietl, T.1
Ohno, H.2
Matsukura, F.3
Cibert, J.4
Ferrand, D.5
-
86
-
-
0035546462
-
xN single crystals
-
xN single crystals, Crystal Growth 233 (2001) 631.
-
(2001)
Crystal Growth
, vol.233
, pp. 631
-
-
Szyszko, T.1
Kamler, G.2
Strojek, B.3
Weisbrod, G.4
Podsiadlo, S.5
Adamowicz, L.6
Gebicki, W.7
Szczytko, J.8
Twardowski, A.9
Sikorski, K.10
-
88
-
-
0036530624
-
Historical review of quartz crystal growth
-
F. Iwasaki, and H. Iwasaki Historical review of quartz crystal growth J. Cryst. Growth 237-339 2002 820
-
(2002)
J. Cryst. Growth
, vol.237
, Issue.339
, pp. 820
-
-
Iwasaki, F.1
Iwasaki, H.2
-
89
-
-
2942654007
-
Characterization of 2.5-Inch diameter bulk GaN grown from the melt-solution
-
V. Sukhovev, V. Ivantsov, Y.U. Melnik, A. Davydov, D. Tsvetkov, K. Tsvetkova, I. Nikitina, A. Zubrilov, A. Lavrentiev, and V. Dimitriev Characterization of 2.5-Inch diameter bulk GaN grown from the melt-solution Phys. Stat. Sol. A 188 1 2001 411
-
(2001)
Phys. Stat. Sol. A
, vol.188
, Issue.1
, pp. 411
-
-
Sukhovev, V.1
Ivantsov, V.2
Melnik, Y.U.3
Davydov, A.4
Tsvetkov, D.5
Tsvetkova, K.6
Nikitina, I.7
Zubrilov, A.8
Lavrentiev, A.9
Dimitriev, V.10
-
91
-
-
31944447323
-
Structure and optical properties of GaN crystals grown from the liquid phase
-
Fall Meeting Boston
-
M. Albrecht, M. Nerding, H.P. Strunk, V.A. Ivantsov, V. Sukhoveev, V.A. Dmitriev, Structure and optical properties of GaN crystals grown from the liquid phase, MRS 2000. Fall Meeting Boston.
-
MRS 2000
-
-
Albrecht, M.1
Nerding, M.2
Strunk, H.P.3
Ivantsov, V.A.4
Sukhoveev, V.5
Dmitriev, V.A.6
-
92
-
-
0011742795
-
Synthesis and properties of HVPE nitride substrates
-
Japan
-
R.P. Vaudo, G.R. Brandes, J.S. Flynn, X. Xu, M.F. Chriss, C.C. Christos, D.M. Keogh, and F.D. Tamweber Synthesis and properties of HVPE nitride substrates Proc. Int. Workshop on Nitride Semiconductors, IPAP Conference Series, vol. 18 Japan 2000 15
-
(2000)
Proc. Int. Workshop on Nitride Semiconductors, IPAP Conference Series, Vol. 18
, pp. 15
-
-
Vaudo, R.P.1
Brandes, G.R.2
Flynn, J.S.3
Xu, X.4
Chriss, M.F.5
Christos, C.C.6
Keogh, D.M.7
Tamweber, F.D.8
-
93
-
-
0037121705
-
Growth and characterization of low defect GaN by hybride vapor phase epitaxy
-
X. Xu, R.P. Vaudo, C. Loria, A. Salant, G.R. Brandes, and J. Chaudhuri Growth and characterization of low defect GaN by hybride vapor phase epitaxy J. Cryst. Growth 246 2002 223
-
(2002)
J. Cryst. Growth
, vol.246
, pp. 223
-
-
Xu, X.1
Vaudo, R.P.2
Loria, C.3
Salant, A.4
Brandes, G.R.5
Chaudhuri, J.6
-
94
-
-
0038010665
-
Fabrication of GaN wafer for electronic and optoelectronic devices
-
X. Xu, R.P. Vaudo, and G.R. Brandes Fabrication of GaN wafer for electronic and optoelectronic devices Opt. Mater. 23 2003 1
-
(2003)
Opt. Mater.
, vol.23
, pp. 1
-
-
Xu, X.1
Vaudo, R.P.2
Brandes, G.R.3
-
95
-
-
0036962310
-
GaN boule Growth, a pathway to GaN wafer with improved material quality
-
R.P. Vaudo, X. Xu, C. Loria, A.D. Salant, J.S. Flynn, and G.R. Brandes GaN boule Growth, a pathway to GaN wafer with improved material quality Phys. Stat. Sol. A 194 2002 494
-
(2002)
Phys. Stat. Sol. A
, vol.194
, pp. 494
-
-
Vaudo, R.P.1
Xu, X.2
Loria, C.3
Salant, A.D.4
Flynn, J.S.5
Brandes, G.R.6
-
96
-
-
0035933013
-
GaN electronics for high poxer, high temperature applications
-
S.J. Pearton, F. Ren, A.P. Zhang, G. Dang, X.A. Cao, K.P. Lee, H. Cho, B.P. Gila, J.W. Johnson, C. Monier, C.R. Abernathy, J. Han, A.G. Baca, J.I. Chyi, C.M. Lee, T.E. Nee, C.C. Chuo, and S.N.G. Chu GaN electronics for high poxer, high temperature applications Mater. Sci. Eng. B 82 2001 227
-
(2001)
Mater. Sci. Eng. B
, vol.82
, pp. 227
-
-
Pearton, S.J.1
Ren, F.2
Zhang, A.P.3
Dang, G.4
Cao, X.A.5
Lee, K.P.6
Cho, H.7
Gila, B.P.8
Johnson, J.W.9
Monier, C.10
Abernathy, C.R.11
Han, J.12
Baca, A.G.13
Chyi, J.I.14
Lee, C.M.15
Nee, T.E.16
Chuo, C.C.17
Chu, S.N.G.18
-
97
-
-
0035274460
-
Materials science and applications of solid crystals III-V Review
-
R. Triboulet, and A. Rogalski Materials science and applications of solid crystals III-V Review Adv. Semiconductor Mag. 14 2 2001 46
-
(2001)
Adv. Semiconductor Mag.
, vol.14
, Issue.2
, pp. 46
-
-
Triboulet, R.1
Rogalski, A.2
-
98
-
-
2542448806
-
New applications for gallium nitride
-
S.J. Pearson, C.R. Abernathy, M.E. Overberg, G.T. Thaler, A.H. Onstine, B.P. Gila, F. Ren, B. Lou, and J. Kim New applications for gallium nitride Mater. Today June, 2002 24
-
(2002)
Mater. Today
, pp. 24
-
-
Pearson, S.J.1
Abernathy, C.R.2
Overberg, M.E.3
Thaler, G.T.4
Onstine, A.H.5
Gila, B.P.6
Ren, F.7
Lou, B.8
Kim, J.9
-
99
-
-
0007884428
-
3/2)m a New Polymeric Precursor for gallium nitride powders
-
3/2)m a New Polymeric Precursor for gallium nitride powders Chem. Mater. 8 1996 2708
-
(1996)
Chem. Mater.
, vol.8
, pp. 2708
-
-
Janik, J.F.1
Wells, R.L.2
-
100
-
-
0030036586
-
A benzene-thermal synthetic route to nanocrystalline GaN
-
Y. Xie, Y. Qian, W. Wang, S. Zhang, and Y. Zhang A benzene-thermal synthetic route to nanocrystalline GaN Science 272 1996 1926
-
(1996)
Science
, vol.272
, pp. 1926
-
-
Xie, Y.1
Qian, Y.2
Wang, W.3
Zhang, S.4
Zhang, Y.5
-
101
-
-
0000916543
-
Optical and microstructural characterization of chemically synthesized gallium nitride powders
-
K.E. Gonsalves, S.P. Rangarajan, and G. Carlson Optical and microstructural characterization of chemically synthesized gallium nitride powders Appl. Phys. Lett. 71 1997 2175
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 2175
-
-
Gonsalves, K.E.1
Rangarajan, S.P.2
Carlson, G.3
-
103
-
-
0033903884
-
Solution synthesis of colloidal gallium nitride at unprecedented low temperature
-
A. Manz, A. Birkner, M. Kolbe, and R.A. Fisher Solution synthesis of colloidal gallium nitride at unprecedented low temperature Adv. Mater. 12 2000 569
-
(2000)
Adv. Mater.
, vol.12
, pp. 569
-
-
Manz, A.1
Birkner, A.2
Kolbe, M.3
Fisher, R.A.4
-
104
-
-
0035184988
-
Solvothermal azide decomposition route to GaN nanoparticles, nanorods, and faceted crystallites
-
L. Grocholl, J. Wang, and E.G. Gillan Solvothermal azide decomposition route to GaN nanoparticles, nanorods, and faceted crystallites Chem. Mater. 13 2001 4290
-
(2001)
Chem. Mater.
, vol.13
, pp. 4290
-
-
Grocholl, L.1
Wang, J.2
Gillan, E.G.3
-
106
-
-
0037050172
-
Gallium nitride synthesis from sodium azide using iodine as a heat sink and diluent
-
J.Q. Hu, B. Deng, W.X. Zhang, K.B. Tang, and Y.T. Qian Gallium nitride synthesis from sodium azide using iodine as a heat sink and diluent Chem. Phys. Lett. 351 2002 229
-
(2002)
Chem. Phys. Lett.
, vol.351
, pp. 229
-
-
Hu, J.Q.1
Deng, B.2
Zhang, W.X.3
Tang, K.B.4
Qian, Y.T.5
-
107
-
-
1842483544
-
New Solvothermal routes for GaN nanocrystals
-
K. Sardar, and C.N.R. Rao New Solvothermal routes for GaN nanocrystals Adv. Mater. 16 2004 425
-
(2004)
Adv. Mater.
, vol.16
, pp. 425
-
-
Sardar, K.1
Rao, C.N.R.2
-
108
-
-
15844381176
-
Growth and characterization of gallium nitride nanowire
-
V. Srivastava, V. Sureshlumar, P. Puviarasu, K. Thangaraju, R. Thangavel, and J. Kumar Growth and characterization of gallium nitride nanowire J. Cryst. Growth 275 1-2 2005 e2367
-
(2005)
J. Cryst. Growth
, vol.275
, Issue.1-2
-
-
Srivastava, V.1
Sureshlumar, V.2
Puviarasu, P.3
Thangaraju, K.4
Thangavel, R.5
Kumar, J.6
-
109
-
-
0000765347
-
Chemical vapour deposition of nitride thin films
-
D.M. Hoffman Chemical vapour deposition of nitride thin films Polyhedron 13 1994 1169
-
(1994)
Polyhedron
, vol.13
, pp. 1169
-
-
Hoffman, D.M.1
-
110
-
-
4544278428
-
2 pressure on silicon carbide and sapphire substrates
-
2 pressure on silicon carbide and sapphire substrates J. Cryst. Growth 270 2004 409
-
(2004)
J. Cryst. Growth
, vol.270
, pp. 409
-
-
Bockowski, M.1
Grzegory, I.2
Krukowski, S.3
Lucznik, B.4
Wroblewski, M.5
Kamler, G.6
Borysiuk, J.7
Kwiatkowski, P.8
Jasik, K.9
Porowski, S.10
-
111
-
-
9944247494
-
As grown p-type GaN growth by dimethylhydrazine nitrogen precursor
-
E.H. Park, J.S. Park, and T.K. Yoo As grown p-type GaN growth by dimethylhydrazine nitrogen precursor J. Cryst. Growth 272 2004 426
-
(2004)
J. Cryst. Growth
, vol.272
, pp. 426
-
-
Park, E.H.1
Park, J.S.2
Yoo, T.K.3
-
112
-
-
15844393866
-
GaN growth using gallium hydride generated by hydrogenation of liquid gallium
-
H. Nagayoshi, S. Nishimura, T. Takeuchi, M. Hirai, and K. Terashima GaN growth using gallium hydride generated by hydrogenation of liquid gallium J. Cryst. Growth 275 2005 e1007
-
(2005)
J. Cryst. Growth
, vol.275
-
-
Nagayoshi, H.1
Nishimura, S.2
Takeuchi, T.3
Hirai, M.4
Terashima, K.5
|