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Applied Physics Letters

Volumn 96, Issue 20, 2010, Pages

GaN avalanche photodiodes grown on m-plane freestanding GaN substrate

(5) Vashaei, Z a Cicek, E a Bayram, C a McClintock, R a Razeghi, M a

a Northwestern University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE BREAKDOWN; FREESTANDING GAN SUBSTRATES; GAN EPILAYERS; GAN LAYERS; GAN SUBSTRATE; HIGH QUALITY; HIGH-QUALITY MATERIALS; HOMOEPITAXIAL; LOW-DISLOCATION DENSITY; M-PLANE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MULTIPLICATION GAIN; PIN PHOTODIODE; REVERSE-BIAS; ROOT MEAN SQUARES; X RAY ROCKING CURVE;

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; ORGANIC CHEMICALS; PHOTODIODES; SUBSTRATES; SURFACE ROUGHNESS;

GALLIUM ALLOYS;

EID: 77952995395 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3432408 Document Type: Article

Times cited : (47)

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