Epitaxy of GaN on Si(111) substrate by the hydride vapor phase epitaxy method

Journal of Crystal Growth

Volumn 370, Issue , 2013, Pages 249-253

  Wang, Juan ^a   Ryu, Heui Bum ^a   Park, Mi Seon ^a   Lee, Won Jae ^a   Choi, Young Jun ^b   Lee, Hae Yong ^b  

^a Dong Eui University   (South Korea)

^b Business Incubator Building   (South Korea)

Author keywords

A1. Substrates; A1. X ray diffraction; A3. Hydride vapor phase epitaxy; B1. GaN

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPILAYERS; EPITAXIAL GROWTH; GALLIUM ALLOYS; HYDRIDES; LATTICE CONSTANTS; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; SURFACE ROUGHNESS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

B1. GAN; CROSS SECTIONAL IMAGE; GAN EPILAYERS; GROWTH METHOD; HYDRIDE VAPOR PHASE EPITAXY; OUT-OF PLANE; ROCKING CURVES; SI SUBSTRATES;

GALLIUM NITRIDE;

EID: 84901626416     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.08.040     Document Type: Article

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