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Applied Physics Letters

Volumn 98, Issue 20, 2011, Pages

Strain in Si doped GaN and the Fermi level effect

(7) Xie, Jinqiao a Mita, Seiji a Rice, Anthony b Tweedie, James b Hussey, Lindsay b Collazo, Ramón b Sitar, Zlatko b

a HexaTech Inc (United States)

b North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CO-DOPING; DISLOCATION CLIMB; FREE CARRIER CONCENTRATION; FREE CARRIERS; GAAS; HALL EFFECT MEASUREMENT; HIGH RESOLUTION X RAY DIFFRACTION; SI CONCENTRATION;

CARRIER CONCENTRATION; ELECTRIC CURRENTS; FERMI LEVEL; GALLIUM ALLOYS; GALLIUM NITRIDE; HALL EFFECT; SILICON; X RAY DIFFRACTION;

TENSILE STRAIN;

EID: 79957564897 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3589978 Document Type: Article

Times cited : (53)

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