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Applied Physics Letters

Volumn 101, Issue 21, 2012, Pages

Heterojunction photodiode fabricated from hydrogen treated ZnO nanowires grown on p-silicon substrate

(4) Shao, Dali a Yu, Mingpeng a,b Lian, Jie a Sawyer, Shayla a

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND DIAGRAMS; CARRIER DIFFUSIONS; FAST TRANSIENT RESPONSE; HETEROJUNCTION PHOTODIODES; HYDROGEN TREATMENTS; HYDROTHERMAL METHODS; P-TYPE SI; PHOTORESPONSIVITY; RESPONSIVITY; REVERSE-SATURATION CURRENTS; ZNO NANOWIRES; ZNO NWS;

HETEROJUNCTIONS; HYDROGEN; NANOWIRES; PHOTODIODES; POWER QUALITY; ZINC OXIDE;

DIODES;

EID: 84870051154 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4767679 Document Type: Article

Times cited : (37)

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