Effects of barrier thinning on small-signal and 30-GHz power characteristics of AlGaN/GaN heterostructure field-effect transistors

IEEE Transactions on Electron Devices

Volumn 58, Issue 6, 2011, Pages 1681-1686

  Higashiwaki, Masataka ^a,b   Pei, Yi ^c   Chu, Rongming ^d   Mishra, Umesh K ^e  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c Dynax Semiconductor   (China)

^d Hughes Aircraft Co   (United States)

^e University of California   (United States)

Author keywords

30 GHz; Current collapse; current gain cutoff frequency fT; dispersion; GaN; heterostructure field effect transistor (HFET); load pull; maximum oscillation frequency fmax; surface states

Indexed keywords

30 GHZ; CURRENT COLLAPSE; CURRENT-GAIN CUTOFF FREQUENCY FT; GAN; HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR (HFET); LOAD PULL; MAXIMUM OSCILLATION FREQUENCY FMAX; SURFACE STATES;

CUTOFF FREQUENCY; DISPERSION (WAVES); DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; ELECTRON GAS; ELECTRONS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; HOT ELECTRONS; SILICON NITRIDE; TRANSISTORS;

HETEROJUNCTIONS;

EID: 79957647438     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2131653     Document Type: Article

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