A high-responsivity GaN nanowire UV photodetector

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 17, Issue 4, 2011, Pages 996-1001

  Weng, W Y ^a   Hsueh, T J ^b   Chang, S J ^a   Wang, S B ^a   Hsueh, H T ^a   Huang, G J ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

GaN; nanowires (NWs); ultraviolet photodetectors (UV PDs)

Indexed keywords

CONTRAST RATIO; GAN; GAN NANOWIRES; REJECTION RATIOS; ULTRA-VIOLET PHOTODETECTORS; UV PHOTODETECTORS;

DYNAMIC RESPONSE; NANOWIRES; OPTOELECTRONIC DEVICES; PHOTODETECTORS;

GALLIUM NITRIDE;

EID: 80051674944     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2010.2060715     Document Type: Article

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