Substrate nitridation induced modulations in transport properties of wurtzite GaNp-Si (100) heterojunctions grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 110, Issue 9, 2011, Pages

  Bhat, Thirumaleshwara N ^a   Rajpalke, Mohana K ^a   Roul, Basanta ^a,b   Kumar, Mahesh ^a,b   Krupanidhi, S B ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b BHARAT ELECTRONICS LIMITED   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TUNNELING; CORE-LEVEL PHOTOELECTRON SPECTROSCOPY; GAN EPILAYERS; GAN FILM; GAN GROWTH; HIGH TEMPERATURE; IDEALITY FACTORS; LOW TEMPERATURES; RECTIFICATION BEHAVIOR; SI (100) SUBSTRATE; SI(1 0 0); SPACE CHARGE LIMITED CURRENTS; SPACE CHARGE REGIONS; SUBSTRATE NITRIDATION; TRANSPORT MECHANISM; TRAP CONCENTRATION; WURTZITE GAN; WURTZITES;

BUFFER LAYERS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NITRIDATION; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; PHOTOELECTRON SPECTROSCOPY; PHOTOLUMINESCENCE SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; SILICON; SILICON NITRIDE; TRANSPORT PROPERTIES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC SULFIDE;

SUBSTRATES;

EID: 81355132343     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3658867     Document Type: Article

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