Effect of diluted ammonia flow rate on undoped GaN epitaxial films grown by MOCVD

Journal of Crystal Growth

Volumn 225, Issue 2-4, 2001, Pages 145-149

  Juang, Fuh Shyang ^a   Chu, T K ^a  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

AMMONIA; CARRIER CONCENTRATION; COMPOSITION EFFECTS; DISSOLUTION; ELECTRON MOBILITY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; THERMAL EFFECTS;

DILUTION;

SEMICONDUCTING FILMS;

EID: 0035334343     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00841-7     Document Type: Conference Paper

References (12)

1. Growth of GaN films by combined laser and microwave plasma enhanced chemical vapour deposition