Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires

Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

  Jeganathan, K ^a,b   Debnath, R K ^a   Meijers, R ^a   Stoica, T ^a   Calarco, R ^a   Grutzmacher D ^a   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b BHARATHIDASAN UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC BROADENING; BEAM POWER; COMPACT LAYER; CRYSTALLINE PERFECTION; DOPED SAMPLE; ELECTRON CONCENTRATION; EXCITATION LASERS; FREE CARRIER CONCENTRATION; FREE ELECTRON CONCENTRATION; GAN NANOWIRES; HIGH SURFACE-TO-VOLUME RATIO; HIGH TEMPERATURE; LATTICE TEMPERATURES; LINE SHAPE ANALYSIS; LITERATURE DATA; LONGITUDINAL OPTICAL PHONONS; LOWER FREQUENCIES; PHONON MODE; PHONON PEAKS; PHONON-PLASMON COUPLED MODE; RAMAN MODES; ROOM TEMPERATURE; SELF-ASSEMBLED; STRAIN-FREE; SURFACE OPTICAL; TEMPERATURE RANGE;

CARRIER CONCENTRATION; CONCENTRATION (PROCESS); ELECTRIC WIRE; ELECTRON MOBILITY; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; LASER EXCITATION; NANOWIRES; PHONONS; PLASMONS; SEMICONDUCTING GALLIUM;

INTEGRATED OPTOELECTRONICS;

EID: 67650236483     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3148862     Document Type: Conference Paper

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