The study of self-heating and hot-electron effects for AlGaN/GaN double-channel HEMTs

IEEE Transactions on Electron Devices

Volumn 59, Issue 5, 2012, Pages 1393-1401

  Wang, Xiao Dong ^a   Hu, Wei Da ^a   Chen, Xiao Shuang ^a   Lu, Wei ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

Double channel HEMTs (DC HEMTs); hot electron effect; III V semiconductors; self heating effect

Indexed keywords

2-D NUMERICAL SIMULATION; ALGAN/GAN; DIRECT CURRENT CHARACTERISTICS; DOUBLE-CHANNEL; DRIFT DIFFUSION; HOT-ELECTRON EFFECT; HYDRODYNAMIC MODEL; II-IV SEMICONDUCTORS; NEGATIVE DIFFERENTIAL CONDUCTANCE; OUTPUT CHARACTERISTICS; SELF-HEATING; SELF-HEATING EFFECT;

FLUID DYNAMICS; GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84862807893     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2188634     Document Type: Article

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