Growth of GaN on Si(111): Surfaces and crystallinity of the epifilms and the transport behavior of GaNSi heterojunctions

Journal of Applied Physics

Volumn 110, Issue 9, 2011, Pages

  Xu, Zhongjie ^a   Zhang, Lixia ^b   He, Hongtao ^b   Wang, Jiannong ^b   Xie, Maohai ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS-LIKE; CRYSTALLINITIES; EPIFILMS; GAN FILM; GROWTH CONDITIONS; GROWTH OF GAN; GROWTH STRATEGY; INTERFACE LAYER; N-DOPED; OHMIC BEHAVIOR; OPTIMAL CONDITIONS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RECTIFYING CHARACTERISTICS; SI (1 1 1); SI SUBSTRATES; SMOOTH SURFACE; TRANSPORT BEHAVIOR; TRANSPORT MEASUREMENTS; TWO-STEP GROWTH;

HETEROJUNCTIONS; SILICON; SUBSTRATES;

GALLIUM NITRIDE;

EID: 81355142851     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3658850     Document Type: Article

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