Current rectification in a single GaN nanowire with a well-defined p-n junction

Applied Physics Letters

Volumn 83, Issue 8, 2003, Pages 1578-1580

  Cheng, Guosheng ^a   Kolmakov, Andrei ^a   Zhang, Youxiang ^a   Moskovits, Martin ^a   Munden, Ryan ^b   Reed, Mark A ^b   Wang, Guangming ^a   Moses, Daniel ^a   Zhang, Jinping ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Yale University   (United States)

^c University of California at Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRON TUNNELING; GALLIUM NITRIDE; SYNTHESIS (CHEMICAL);

NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 0042281606     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1604190     Document Type: Article

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