Electrical properties of InGaN-Si heterojunctions

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Ager, Joel W ^a   Reichertz, Lothar A ^a   Cui, Yi ^a   Romanyuk, Yaroslav E ^a,b   Kreier, Daniel ^a,b   Leone, Stephen R ^a,b   Yu, Kin Man ^a   Schaff, William J ^c   Walukiewicz, Wladyslaw ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ELECTRICAL PROPERTY; ELECTRICAL TRANSPORT PROPERTIES; HETEROJUNCTION DEVICES; OHMIC JUNCTIONS; P-TYPE SI; POWER CONVERSION EFFICIENCIES; SERIES RESISTANCES; SI (1 1 1);

BUFFER LAYERS; CONVERSION EFFICIENCY; DISTILLATION; ELECTRIC PROPERTIES; GALLIUM; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SILICON; TRANSPORT PROPERTIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70449685024     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880967     Document Type: Article

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