Growth behavior of GaN nanoneedles with changing HCl/NH3 flow ratio

Materials Letters

Volumn 63, Issue 30, 2009, Pages 2695-2697

  Moon, J Y ^a   Kwon, H Y ^a   Shin, M J ^a   Choi, Y J ^a   Ahn, H S ^a   Chang, J H ^a   Yi, S N ^a   Yun, Y J ^b   Ha, D H ^b   Park, S H ^c  

^a Korea Maritime University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Catholic University of Daegu   (South Korea)

Author keywords

Epitaxial growth; Nanomaterials; Semiconductors

Indexed keywords

FIELD EMISSION SCANNING ELECTRON MICROSCOPY; FLOW RATIOS; GAS-FLOW RATIO; GROWTH BEHAVIOR; HYDRIDE VAPOR PHASE EPITAXY; LATERAL DIRECTIONS; NANOMATERIALS; NEAR BAND EDGE; PL SPECTRA; ROOM TEMPERATURE; SEMICONDUCTORS; VERTICAL GROWTH;

DIFFRACTION; EPITAXIAL GROWTH; FIELD EMISSION; FLOW OF GASES; GALLIUM NITRIDE; HOLOGRAPHIC INTERFEROMETRY; LEAKAGE (FLUID); NANONEEDLES; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SUBSTRATES;

GALLIUM ALLOYS;

EID: 70350131990     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2009.09.045     Document Type: Article

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