메뉴 건너뛰기




Volumn 31, Issue 12, 2010, Pages 1437-1439

N-polar GaN/AlN MIS-HEMT for ka-band power applications

Author keywords

Digital doping; GaN spacer; metalinsulatorsemiconductor high electron mobility transistor (MIS HEMT); millimeter wave power; N polar GaN

Indexed keywords

ALLOY SCATTERING; ALN BARRIERS; CURRENT COLLAPSE; DIGITAL DOPING; GAN SPACER; GATE LENGTH; I-V MEASUREMENTS; KA BAND; LINEAR TRANSDUCERS; LOW-OHMIC CONTACT; MILLIMETER-WAVE POWER PERFORMANCE; MIS-HEMT; N-POLAR GAN; PEAK OUTPUT POWER; POWER APPLICATIONS; POWER GAINS; POWER-ADDED EFFICIENCY; RF DISPERSION; SI-DOPING; SURFACE-ROUGHENING;

EID: 78649400780     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2078791     Document Type: Article
Times cited : (13)

References (12)
  • 1
    • 0842277372 scopus 로고
    • High electron mobility transistor based on a GaN-Al^Ga1-zN heterojunction
    • Aug.
    • M. A. Khan, A. Bhattarai, J. N. Kuznia, and D. T. Olson, "High electron mobility transistor based on a GaN-Al^Ga1-zN heterojunction," Appl. Phys. Lett., vol. 63, no. 9, pp. 1214-1215, Aug. 1993.
    • (1993) Appl. Phys. Lett. , vol.63 , Issue.9 , pp. 1214-1215
    • Khan, M.A.1    Bhattarai, A.2    Kuznia, J.N.3    Olson, D.T.4
  • 5
    • 77951165875 scopus 로고    scopus 로고
    • Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth
    • Apr.
    • S. Dasgupta, Nidhi, D. F. Brown, F. Wu, S. Keller, J. S. Speck, and U. K. Mishra, "Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth," Appl. Phys. Lett., vol. 96, no. 14, p. 143 504, Apr. 2010.
    • (2010) Appl. Phys. Lett. , vol.96 , Issue.14 , pp. 143-504
    • Dasgupta, S.1    Brown, F.N.D.2    Wu, F.3    Keller, S.4    Speck, J.S.5    Mishra, U.K.6
  • 6
    • 34548418932 scopus 로고    scopus 로고
    • N-polar GaN/AlGaN/GaN high electron mobility transistors
    • Aug.
    • S. Rajan, A. Chini, M. H. Wong, J. S. Speck, and U. K. Mishra, "N-polar GaN/AlGaN/GaN high electron mobility transistors," J. Appl. Phys., vol. 102, no. 4, p. 044 501, Aug. 2007.
    • (2007) J. Appl. Phys. , vol.102 , Issue.4 , pp. 044-501
    • Rajan, S.1    Chini, A.2    Wong, M.H.3    Speck, J.S.4    Mishra, U.K.5
  • 7
    • 65549094078 scopus 로고    scopus 로고
    • High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation
    • May
    • M. H. Wong, Y. Pei, J. S. Speck, and U. K. Mishra, "High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation," Appl. Phys. Lett., vol. 94, no. 18, p. 182 103, May 2009.
    • (2009) Appl. Phys. Lett. , vol.94 , Issue.18 , pp. 182-103
    • Wong, M.H.1    Pei, Y.2    Speck, J.S.3    Mishra, U.K.4
  • 8
    • 68249137196 scopus 로고    scopus 로고
    • High performance N-face GaN microwave MIS-HEMTs with > 70% power-added efficiency
    • Aug.
    • M. H. Wong, Y. Pei, D. F. Brown, J. S. Speck, and U. K. Mishra, "High performance N-face GaN microwave MIS-HEMTs with > 70% power-added efficiency," IEEE Electron Device Lett., vol. 30, no. 8, pp. 802-804, Aug. 2009.
    • (2009) IEEE Electron Device Lett. , vol.30 , Issue.8 , pp. 802-804
    • Wong, M.H.1    Pei, Y.2    Brown, D.F.3    Speck, J.S.4    Mishra, U.K.5
  • 10
    • 77952356610 scopus 로고    scopus 로고
    • N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-art fT.LQ product of 16.8 GHz-μm
    • Baltimore, MD, Dec.
    • Nidhi, S. Dasgupta, D. F. Brown, S. Keller, J. S. Speck, and U. K. Mishra, "N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-art fT.LQ product of 16.8 GHz-μm," in IEDM Tech. Dig., Baltimore, MD, Dec. 2009, pp. 1-3.
    • (2009) IEDM Tech. Dig. , pp. 1-3
    • Dasgupta, N.S.1    Brown, D.F.2    Keller, S.3    Speck, J.S.4    Mishra, U.K.5
  • 12
    • 0000126705 scopus 로고
    • Novel high-yield trilayer resist process for 0.1 μ m T-gate fabrication
    • Microelectron. Nanometer Struct.
    • A. S. Wakita, C.-Y Su, H. Rohdin, H.-Y Liu, A. Lee, J. Seeger, and V. M. Robbins, "Novel high-yield trilayer resist process for 0.1 μ m T-gate fabrication," J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct., vol. 13, no. 6, pp. 2725-2728, Nov./Dec. 1995.
    • (1995) J. Vac. Sci. Technol. B , vol.13 , Issue.6 , pp. 2725-2728
    • Wakita, A.S.1    Su, C.-Y.2    Rohdin, H.3    Liu, H.-Y.4    Lee, A.5    Seeger, J.6    Robbins, V.M.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.