N-polar GaN/AlN MIS-HEMT for ka-band power applications

IEEE Electron Device Letters

Volumn 31, Issue 12, 2010, Pages 1437-1439

  Nidhi, ^a   Dasgupta, Sansaptak ^a   Pei, Yi ^a   Swenson, Brian L ^a   Keller, Stacia ^a   Speck, James S ^a   Mishra, Umesh K ^a  

^a Santa Barbara   (United States)

Author keywords

Digital doping; GaN spacer; metalinsulatorsemiconductor high electron mobility transistor (MIS HEMT); millimeter wave power; N polar GaN

Indexed keywords

ALLOY SCATTERING; ALN BARRIERS; CURRENT COLLAPSE; DIGITAL DOPING; GAN SPACER; GATE LENGTH; I-V MEASUREMENTS; KA BAND; LINEAR TRANSDUCERS; LOW-OHMIC CONTACT; MILLIMETER-WAVE POWER PERFORMANCE; MIS-HEMT; N-POLAR GAN; PEAK OUTPUT POWER; POWER APPLICATIONS; POWER GAINS; POWER-ADDED EFFICIENCY; RF DISPERSION; SI-DOPING; SURFACE-ROUGHENING;

DC POWER TRANSMISSION; GALLIUM ALLOYS; GALLIUM NITRIDE; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; WAVE POWER;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78649400780     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2078791     Document Type: Article

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