SCOPUS 정보 검색 플랫폼

Volumn 109, Issue 10, 2011, Pages

Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

(9) Gacevic Z a,b Das, A a Teubert, J a,c Kotsar, Y a Kandaswamy, P K a Kehagias, Th d Koukoula, T d Komninou, Ph d Monroy, E a

a CEA GRENOBLE (France)

b UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

c JUSTUS LIEBIG UNIVERSITY (Germany)

d ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LOCALIZATION; CARRIER TRANSFER; EXCITATION WAVELENGTH; III-NITRIDE; INGAN/GAN; INHOMOGENEITIES; INTERNAL QUANTUM EFFICIENCY; PEAK EMISSIONS; PHOTOLUMINESCENCE MEASUREMENTS; PL EXCITATIONS; PL MEASUREMENTS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POTENTIAL FLUCTUATIONS; QD STACKS; QUANTUM DOT SUPERLATTICES; QUANTUM WELL; SPATIAL EXTENSION; STRUCTURAL DEFECT; THICKNESS FLUCTUATIONS; TRANSPORT LOSS; UPPER LIMITS; WETTING LAYER;

ATOMIC FORCE MICROSCOPY; DEFECTS; EFFICIENCY; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAMS; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES; THREE DIMENSIONAL; TRANSMISSION ELECTRON MICROSCOPY;

QUANTUM EFFICIENCY;

EID: 79958793036 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3590151 Document Type: Conference Paper

Times cited : (77)

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