Strain evolution in GaN nanowires: From free-surface objects to coalesced templates

Journal of Applied Physics

Volumn 114, Issue 8, 2013, Pages

  Hugues, M ^a   Shields, P A ^b   Sacconi, F ^c,d   Mexis, M ^a   Auf Der Maur, M ^c   Cooke, M ^e   Dineen, M ^e   Di Carlo, A ^c   Allsopp, D W E ^b   Zuniga Perez J ^a  

^a CRHEA CNRS   (France)

^b University of Bath   (United Kingdom)

^c UNIVERSITY OF ROME TOR VERGATA   (Italy)

^d Universit di Roma Tor Vergata   (Italy)

^e OXFORD INSTRUMENTS PLASMA TECHNOLOGY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS MEDIA; ELASTIC RELAXATION; NUMERICAL RESULTS; RELAXATION BEHAVIORS; STRAIN EVOLUTION; STRAIN PROFILES; STRUCTURAL CHARACTERIZATION; VERTICAL DIRECTION;

GALLIUM NITRIDE; PHOTOLUMINESCENCE; X RAY DIFFRACTION;

NANOWIRES;

EID: 84883856731     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4818962     Document Type: Article

References (66)

1. M. Law, L. E. Greene, J. C. Johnson, R. Saykally, and P. Yang, Nature Mater. 4, 455 (2005). 10.1038/nmat1387
2. J. Wallentin, N. Anttu, D. Asoli, M. Huffman, I. Aberg, M. H. Magnusson, G. Siefer, P. Fuss-Kailuweit, F. Dimroth, B. Witzigmann, H. Q. Xu, L. Samuelson, K. Deppert, and M. T. Borgström, Science 339, 1057 (2013). 10.1126/science.1230969
3. S. Li and A. Waag, J. Appl. Phys. 111, 071101 (2012). 10.1063/1.3694674
4. M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, Science 292, 1897 (2001). 10.1126/science.1060367
5. J. C. Johnson, H.-J. Choi, K. P. Knutsen, R. D. Schaller, P. Yang, and R. J. Saykally, Nature Mater. 1, 106 (2002). 10.1038/nmat728
6. T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, Nature Mater. 6, 951 (2007). 10.1038/nmat2037
7. F. Qian, Y. Li, S. Gradecak, H.-G. Park, Y. Dong, Y. Ding, Z. L. Wang, and C. M. Lieber, Nature Mater. 7, 701 (2008). 10.1038/nmat2253
8. Y. Cui, Q. Wei, H. Park, and C. M. Lieber, Science 293, 1289 (2001). 10.1126/science.1062711
9. G. Zheng, F. Patolsky, Y. Cui, W. U. Wang, and C. M. Lieber, Nat. Biotechnol. 23, 1294 (2005). 10.1038/nbt1138
10. Q. Wan, Q. H. Li, Y. J. Chen, T. H. Wang, X. L. He, J. P. Li, and C. L. Lin, Appl. Phys. Lett. 84, 3654 (2004). 10.1063/1.1738932
11. R. Yan, D. Gargas, and P. Yang, Nat. Photonics 3, 569 (2009). 10.1038/nphoton.2009.184
12. X.-J. Huang and Y.-K. Choi, Sens. Actuators B 122, 659 (2007). 10.1016/j.snb.2006.06.022
13. Z. L. Wang and J. Song, Science 312, 242 (2006). 10.1126/science.1124005
14. X. Wang, J. Song, J. Liu, and Z. L. Wang, Science 316, 102 (2007). 10.1126/science.1139366
15. J. Zhou, Y. Gu, P. Fei, W. Mai, Y. Gao, R. Yang, G. Bao, and Z.-L. Wang, Nano. Lett. 8, 3035 (2008). 10.1021/nl802367t
16. A. Dadgar, J. Bläsing, A. Diez, A. Alam, M. Heuken, and A. Krost, Jpn. J. Appl. Phys., Part 2 39, L1183 (2000). 10.1143/JJAP.39.L1183
17. E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, H. Lahrèche, M. Leroux, and P. Gibart, Appl. Phys. Lett. 79, 3230 (2001). 10.1063/1.1415043
18. K. Kusakabe, A. Kikuchi, and K. Kishino, Jpn. J. Appl. Phys., Part 2 40, L192 (2001). 10.1143/JJAP.40.L192
19. K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, J. Cryst. Growth 221, 316 (2000). 10.1016/S0022-0248(00)00707-7
20. P. Gibart, Rep. Prog. Phys. 67, 667 (2004). 10.1088/0034-4885/67/5/R02
21. Z. Bougrioua, P. Gibart, E. Calleja, U. Jahn, A. Trampert, J. Ristic, M. Urtera, and G. Nataf, J. Cryst. Growth 309, 113 (2007). 10.1016/j.jcrysgro.2007. 09.030
22. T.-H. Yang, J. T. Ku, J.-R. Chang, S.-G. Shen, Y.-C. Chen, Y. Y. Wong, W. C. Chou, C.-Y. Chen, and C.-Y. Chang, J. Cryst. Growth 311, 1997 (2009). 10.1016/j.jcrysgro.2008.10.099
23. T.-Y. Tang, W.-Y. Shiao, C.-H. Lin, K.-C. Shen, J.-J. Huang, S.-Y. Ting, T.-C. Liu, C.-C. Yang, C.-L. Yao, J.-H. Yeh, T.-C. Hsu, W.-C. Chen, H.-C. Hsu, and L.-C. Chen, J. Appl. Phys. 105, 023501 (2009). 10.1063/1.3065527
24. P. Shields, C. Liu, A. Satka, A. Trampert, J. Zùñiga- Pérez, B. Alloing, D. Hasko, F. Uherek, W. Wang, F. Causa, and D. Allsopp, Phys. Status Solidi C 8, 2334 (2011). 10.1002/pssc.201000996
25. K. J. Lethy, P. R. Edwards, C. Liu, W. N. Wang, and R. W. Martin, J. Appl. Phys. 112, 023507 (2012). 10.1063/1.4737418
26. M. W. Larsson, J. B. Wagner, M. Wallin, P. Hakansson, L. E. Fröberg, L. Samuelson, and L. R. Wallenberg, Nanotechnology 18, 015504 (2007). 10.1088/0957-4484/18/1/015504
27. Y. H. Kim, H. J. Park, K. Kim, C. S. Kim, W. S. Yun, J. W. Lee, and M. D. Kim, Appl. Phys. Lett. 95, 033112 (2009). 10.1063/1.3184541
28. M. Hanke, C. Eisenschmidt, P. Werner, N. D. Zakharov, F. Syrowatka, F. Heyroth, P. Schäfer, and O. Konovalov, Phys. Rev. B 75, 161303 (2007). 10.1103/PhysRevB.75.161303
29. K. Herstroffer, R. Mata, D. Camacho, C. Leclere, G. Tourbot, Y. M. Niquet, A. Cros, C. Bougerol, H. Renevier, and B. Daudin, Nanotechnology 21, 415702 (2010). 10.1088/0957-4484/21/41/415702
30. K. L. Kavanagh, J. Salfi, I. Savelyev, M. Blumin, and H. E. Ruda, Appl. Phys. Lett. 98, 152103 (2011). 10.1063/1.3579251
31. M. Keplinger, T. Martensson, J. Stangl, E. Wintersberger, B. Mandl, D. Kriegner, V. Holy, G. Bauer, K. Deppert, and L. Samuelson, Nano Lett. 9, 1877 (2009). 10.1021/nl803881b
32. M. C. Newton, S. J. Leake, R. Harder, and I. K. Robinson, Nature Mater. 9, 120 (2010). 10.1038/nmat2607
33. J. L. Taraci, M. J. Hÿtch, T. Clement, P. Peralta, M. R. McCartney, J. Drucker, and S. T. Picraux, Nanotechnology 16, 2365 (2005). 10.1088/0957-4484/16/10/062
34. M. Knelangen, V. Consonni, A. Trampert, and H. Riechert, Nanotechnology 21, 245705 (2010). 10.1088/0957-4484/21/24/245705
35. V. M. Kaganer, B. Jenichen, O. Brandt, S. Fernandez-Garrido, P. Dogan, L. Geelhaar, and H. Riechert, Phys. Rev. B 86, 115325 (2012). 10.1103/PhysRevB.86. 115325
36. X. Zhang, V. G. Dubrovskii, N. V. Sibirev, and X. Ren, Cryst. Growth Des. 11, 5441 (2011). 10.1021/cg201029x
37. W. J. Tseng, M. Gonzalez, L. Dillemans, K. Cheng, S. J. Jiang, P. M. Vereecken, G. Borghs, and R. R. Lieten, Appl. Phys. Lett. 101, 253102 (2012). 10.1063/1.4772481
38. P. A. Shields and D. Allsopp, Microelectron. Eng. 88, 3011 (2011). 10.1016/j.mee.2011.04.063
39. P. A. Shields, M. Hugues, J. Zuñiga-Pérez, M. Cooke, M. Dineen, W. Wang, F. Causa, and D. Allsopp, Phys. Status Solidi C 9, 631 (2012). 10.1002/pssc.201100394
40. H. Lahrèche, M. Leroux, M. Laügt, M. Vaille, B. Beaumont, and P. Gibart, J. Appl. Phys. 87, 577 (2000). 10.1063/1.371902
41. M. Leroux, H. Lahrèche, F. Semond, M. Laügt, E. Feltin, N. Schnell, B. Beaumont, P. Gibart, and J. Massies, Mater. Sci. Forum 353-356, 795 (2001). 10.4028/www.scientific.net/MSF.353-356.795
42. F. Demangeot, J. Gleize, J. Frandon, M. A. Renucci, M. Kuball, D. Peyrade, L. Manin-Ferlazzo, Y. Chen, and N. Grandjean, J. Appl. Phys. 91, 6520 (2002). 10.1063/1.1468908
43. K. P. Korona, A. Wysmolek, K. Pakula, R. Stepniewski, J. M. Baranowski, I. Grzegory, B. Lecznik, M. Wroblewski, and S. Porowski, Appl. Phys. Lett. 69, 788 (1996). 10.1063/1.117892
44. E. Calleja, M. A. Sanchez-Garcia, F. J. Sanchez, F. Calle, F. B. Naranjo, E. Muñoz, U. Jahn, and K. Ploog, Phys. Rev. B 62, 16826 (2000). 10.1103/PhysRevB.62.16826
45. O. Brandt, C. Pfüller, C. Chèze, L. Geelhaar, and H. Riechert, Phys. Rev. B 81, 045302 (2010). 10.1103/PhysRevB.81.045302
46. J. B. Schlager, K. A. Bertness, P. T. Blanchard, L. H. Robins, A. Roshko, and N. A. Sanford, J. Appl. Phys. 103, 124309 (2008). 10.1063/1.2940732
47. N. Thillosen, K. Sebald, H. Hardtdegen, R. Meijers, R. Calarco, S. Montanari, N. Kaluza, J. Gutowski, and H. Lûth, Nano Lett. 6, 704 (2006). 10.1021/nl052456q
48. D. Gogova, A. Kasic, H. Larsson, C. Hemmingsson, B. Monemar, T. Tuomisto, K. Saarinen, L. Dobos, B. Pécz, P. Gibart, and B. Beaumont, J. Appl. Phys 96, 799 (2004). 10.1063/1.1753073
49. D. C. Look, Z.-Q. Fang, and B. Claflin, J. Cryst. Growth 281, 143 (2005). 10.1016/j.jcrysgro.2005.03.035
50. R. Dwilinski, R. Doradzinski, J. Garczynski, L. P. Sierzputowski, M. Zajac, and M. Rudzinski, J. Cryst. Growth 311, 3058 (2009). 10.1016/j.jcrysgro. 2009.01.078
51. G. L. Bir and G. E. Pikus, Symmetry and Strain-induced Effects in Semiconductors (Wiley/Halsted Press, 1974).
52. C. P. Dietrich, M. Lange, F. J. Klüpfel, H. von Wenckstern, R. Schmidt-Grund, and M. Grundmann, Appl. Phys. Lett. 98, 031105 (2011). 10.1063/1.3544939
53. H. Siegle, A. Hoffmann, L. Eckey, C. Thomsen, J. Christen, F. Bertram, D. Schmidt, D. Rudloff, and K. Hiramatsu, Appl. Phys. Lett. 71, 2490 (1997). 10.1063/1.120097
54. D. C. Reynolds, D. C. Look, B. Jogai, J. E. Hoelscher, R. E. Sherriff, and R. J. Molnar, J. Appl. Phys. 88, 1460 (2000). 10.1063/1.373839
55. A. Castaldini, A. Cavallini, and L. Poenta, Appl. Phys. Lett. 84, 4851 (2004). 10.1063/1.1760591
56. M. A. Moram, Z. H. Barber, and C. J. Humphreys, J. Appl. Phys. 102, 023505 (2007). 10.1063/1.2749484
57. V. Darakchieva, T. Paskova, P. P. Paskov, B. Monemar, N. Ashkenov, and M. J. Schubert, J. Appl. Phys. 97, 013517 (2005). 10.1063/1.1823024
58. V. Darakchieva, B. Monemar, and A. Usui, Appl. Phys. Lett. 91, 031911 (2007). 10.1063/1.2753122
59. J.-M. Wagner and F. Bechstedt, Phys. Rev. B 66, 115202 (2002). 10.1103/PhysRevB.66.115202
60. See http://www.tibercad.org for TiberCAD simulation software.
61. M. Auf der Maur, F. Sacconi, G. Penazzi, G. Romano, A. Pecchia, and A. Di Carlo, IEEE Trans. Electron. Devices 58, 1425 (2011). 10.1109/TED.2011.2114666
62. M. Povolotskyi and A. Di Carlo, J. Appl. Phys. 100, 063514 (2006). 10.1063/1.2337110
63. Q. Li, Y. Lin, J. R. Creighton, J. J. Figiel, and G. T. Wang, Adv. Mater. 21, 2416 (2009). 10.1002/adma.200802532
64. F. Bertram, T. Riemann, J. Christen, A. Kaschner, A. Hoffman, C. Thomsen, K. Hiramatsu, T. Shibata, and N. Sawaki, Appl. Phys. Lett. 74, 359 (1999). 10.1063/1.123071
65. E. Feltin, B. Beaumont, P. Vennéguès, M. Vaille, P. Gibart, T. Riemann, J. Christen, L. Dobos, and B. Pécz, J. Appl. Phys. 93, 182 (2003). 10.1063/1.1516838
66. E. Y. Xie, Z. Z. Chen, P. R. Edwards, Z. Gong, N. Y. Liu, Y. B. Tao, Y. F. Zhang, Y. J. Chen, I. M. Watson, E. Gu, R. W. Martin, G. Y. Zhang, and M. D. Dawson, J. Appl. Phys. 112, 013107 (2012). 10.1063/1.4733335