Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging

Journal of Applied Physics

Volumn 112, Issue 1, 2012, Pages

  Xie, E Y ^a   Chen, Z Z ^a,b   Edwards, P R ^a   Gong, Z ^a   Liu, N Y ^a,b   Tao, Y B ^a,b   Zhang, Y F ^a   Chen, Y J ^a   Watson, I M ^a   Gu, E ^a   Martin, R W ^a   Zhang, G Y ^b   Dawson, M D ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; EMISSION WAVELENGTH; GAN BUFFER LAYERS; HIGH RESOLUTION; HIGH SPATIAL RESOLUTION; HYPERSPECTRAL IMAGING; III-NITRIDE; INGAN/GAN; MICRO-PILLARS; PIEZO-ELECTRIC FIELDS; PILLAR DIAMETERS; PRACTICAL GUIDANCE; STRAIN DISTRIBUTIONS; STRAIN-DEPENDENT; STRAINED BUFFER LAYERS; SUBMICRON SCALE; TRANSITION ENERGY;

BUFFER LAYERS; CATHODOLUMINESCENCE; FINITE ELEMENT METHOD; GALLIUM NITRIDE; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM WELLS; STRAIN RELAXATION;

LIGHT EMITTING DIODES;

EID: 84864126594     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4733335     Document Type: Article

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