Fabrication and properties of etched GaN nanorods

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 3-4, 2012, Pages 631-634

  Shields, Philip ^a   Hugues, Maxime ^b   Zúñiga Pérez, Jesus ^b   Cooke, Mike ^c   Dineen, Mark ^c   Wang, Wang ^a   Causa, Federica ^a   Allsopp, Duncan ^a  

^a University of Bath   (United Kingdom)

^b CRHEA CNRS   (France)

^c OXFORD INSTRUMENTS PLASMA TECHNOLOGY   (United Kingdom)

Author keywords

Dry etching; GaN; Lift off; Nanocolumns; Nanoimprint lithography; Nanorods

Indexed keywords

GAN; GAN NANORODS; LIFT-OFF; NANO-COLUMNS; NANO-IMPRINT; NANOROD ARRAYS; TOPDOWN;

ASPECT RATIO; DRY ETCHING; GALLIUM NITRIDE; NANOIMPRINT LITHOGRAPHY;

NANORODS;

EID: 84863366739     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100394     Document Type: Article

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