Thickness-related features observed in GaN epitaxial layers

Applied Physics Letters

Volumn 84, Issue 24, 2004, Pages 4851-4853

  Castaldini, A ^a   Cavallini, A ^a   Polenta, L ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRON BEAMS; METALLIZING; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; SAMPLING; VAPOR PHASE EPITAXY;

ENERGETIC RESOLUTION; EPITAXIAL LAYERS; LAYER THICKNESS; MATERIAL PERFORMANCE;

GALLIUM NITRIDE;

EID: 3042813434     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1760591     Document Type: Article

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