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Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 24, 2000, Pages 16826-16834

Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy

(8) Calleja, E a Sanchez Garcia M A a Sanchez F J a Calle, F a Naranjo, F B a Munoz E a Jahn, U b Ploog, K b

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; MINERAL; NITROGEN DERIVATIVE; SILICON;

ARTICLE; CRYSTAL STRUCTURE; CRYSTALLIZATION; DENSITY; ELECTRIC FIELD; ELECTRON BEAM; ENERGY; LUMINESCENCE; MOLECULAR SIZE; REPRODUCIBILITY; STOICHIOMETRY;

EID: 0034670743 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.62.16826 Document Type: Article

Times cited : (373)

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