Homoepitaxy on bulk ammonothermal GaN

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 3058-3062

  Dwilinski, R ^a   Doradzinski, R ^a   Garczynski, J ^a   Sierzputowski, L P ^a   Zajac, M ^a   Rudzinski, M ^a  

^a AMMONO Sp Zoo   (Poland)

Author keywords

A1. Homoepitaxy; A1. Optical properties; A2. Ammonothermal crystal growth; A3. Metalorganic chemical vapor deposition; B1. Gallium nitride

Indexed keywords

A1. HOMOEPITAXY; A1. OPTICAL PROPERTIES; A2. AMMONOTHERMAL CRYSTAL GROWTH; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. GALLIUM NITRIDE;

CRYSTAL GROWTH; CRYSTALLIZATION; EXCITONS; GALLIUM NITRIDE; GRAIN BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; VAPORS;

GALLIUM ALLOYS;

EID: 65749101206     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.078     Document Type: Article

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