Growth of free-standing GaN layer on Si(1 1 1) substrate

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1997-2001

  Yang, Tsung Hsi ^a   Ku, Jui Tai ^a   Chang, Jet Rung ^a   Shen, Shih Guo ^a   Chen, Yi Cheng ^a   Wong, Yuen Yee ^a   Chou, Wu Ching ^a   Chen, Chien Ying ^b   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Ulvac Taiwan Inc   (Taiwan)

Author keywords

A1. Free standing GaN; A1. Funnel like nano rods; A3. Metalorganic chemical vapor deposition; A3. RF plasma molecular beam epitaxy

Indexed keywords

COALESCENCE; CRYSTAL GROWTH; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANORODS; PLASMAS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SILICON; SUBSTRATES; VAPORS;

A1. FREE-STANDING GAN; A1. FUNNEL-LIKE NANO-RODS; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; A3. RF-PLASMA MOLECULAR BEAM EPITAXY; BAND EDGES; BUFFER STRUCTURES; DEEP-LEVEL EMISSIONS; GAN LAYERS; HIGH RESOLUTION X-RAY DIFFRACTIONS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; OPTICAL CHARACTERISTICS; SI (1 1 1); SI SUBSTRATES; STRAIN-FREE;

GALLIUM ALLOYS;

EID: 63349097601     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.099     Document Type: Article

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