Strain variation with sample thickness in GaN grown by hydride vapor phase epitaxy

Journal of Applied Physics

Volumn 88, Issue 3, 2000, Pages 1460-1463

  Reynolds, D C ^a   Look, D C ^a   Jogai, B ^a   Hoelscher, J E ^a   Sherriff, R E ^b   Molnar, R J ^c  

^a WRIGHT STATE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c MIT LINCOLN LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001640392     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373839     Document Type: Article

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