Exciton region reflectance of homoepitaxial GaN layers

Applied Physics Letters

Volumn 69, Issue 6, 1996, Pages 788-790

  Korona, K P ^a   Wysmolek A ^a   Pakula K ^a   Stepniewski R ^a   Baranowski, J M ^a   Grzegory, I ^b   Lucznik B ^b   Wroblewski M ^b   Porowski, S ^b  

^a UNIVERSITY OF WARSAW   (Poland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000955895     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117892     Document Type: Article

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