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Volumn 8, Issue 9, 2008, Pages 3035-3040

Flexible piezotronic strain sensor

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BIOMEDICAL SCIENCE; DIFFUSION MODELS; ELECTRO-MECHANICAL SENSORS; EXPERIMENTAL DATUM; GAUGE FACTORS; HIGHLY SENSITIVES; I-V CHARACTERISTICS; IN CELLS; MEMS DEVICES; MICRO WIRES; OUTER SURFACES; PIEZO-ELECTRIC EFFECTS; POLYDIMETHYLSILOXANE PDMS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; STRAIN SENSORS; STRUCTURE CHANGES; STRUCTURE MONITORING; THIN LAYERS; ZNO;

EID: 54549095063     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl802367t     Document Type: Article
Times cited : (753)

References (36)
  • 20
    • 61549090067 scopus 로고    scopus 로고
    • Dover Publications: Mineola, NY
    • Soutas-Little, R. W. Elasticity, XVI, 431: Dover Publications: Mineola, NY, 1999.
    • (1999) Elasticity, XVI , vol.431
    • Soutas-Little, R.W.1
  • 21
    • 0004097995 scopus 로고
    • Reading, Mass, Pergamon Press, and Addison-Wesley Pub. Co, London
    • Landau, L. D.; Lifshiëtìs, E. M. Theory of elasticity; Reading, Mass., Pergamon Press, and Addison-Wesley Pub. Co.: London, 1959.
    • (1959) Theory of elasticity
    • Landau, L.D.1    Lifshiëtìs, E.M.2
  • 22
    • 84868895126 scopus 로고    scopus 로고
    • Because of the small size of the ZnO wire, the mechanical behavior of the plastic substrate is not affected by the ZnO wire. As a simple estimation of the strain, we use the Saint-Venant bending theory for small deflections. 20 The shape of the plastic substrate can be approximated as a beam, with the thickness 2a, width w and length l. Let us establish the coordinate system so that the origin is at the center of the cross section of the fixed side, while the z axis is parallel to the length l and x axis is parallel to the width w. To calculate how the nanowire elongates or shortens as the substrate is deflected under an external bending force fy, we only need to calculate the εzzcomponent of the strain, so that εzz, ΔLwire/Lwire. On the other hand,20 σzz, fy/Ixxyl-z
    • 0/I (1) As expected, this strain valuse is dimensionless and eq 1 does not include the Young's modules E. The negative value stands for the compressed side, and the positive value stands for the tensile side.
  • 29
    • 61549122464 scopus 로고    scopus 로고
    • Reference 28 shows that the strain/stress dependence of A ** arises only from the stress/strain dependence of the effective mass. The ratio of change effect mass to change of band gaps with strain/stress is about 0.1, Thus, the small change of A ** is neglected. He and Yang's report in ref 15 indicated that large piezoresistance effect of silicon nanowire derives mainly from the change in mobility rather that carrier density, so ND under various strain in our experiments can be considered as constant
    • D under various strain in our experiments can be considered as constant.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.