Nanopendeo coalescence overgrowth of GaN on etched nanorod array

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2334-2336

  Shields, Philip ^a   Liu, Chaowang ^a   Šatka, Alexander ^b   Trampert, Achim ^c   Zúñiga Pérez, Jesus ^d   Alloing, Blandine ^d   Haško, Daniel ^b   Uherek, Frantisek ^b   Wang, Wang ^a   Causa, Federica ^a   Allsopp, Duncan ^a  

^a University of Bath   (United Kingdom)

^b INTERNATIONAL LASER CENTER   (Slovakia)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^d CRHEA CNRS   (France)

Author keywords

GaN; MOVPE; Nanocolumns; Nanopendeo; Nanorods; Overgrowth

Indexed keywords

CRYSTALLOGRAPHIC QUALITY; GAN; LATERAL GROWTH; NANO-COLUMNS; NANOPENDEO; NANOROD ARRAYS; NANOROD SURFACES; OVERGROWTH; SELECTIVE REGROWTH; WAFER-SCALE;

COALESCENCE; EPITAXIAL GROWTH; GALLIUM NITRIDE;

NANORODS;

EID: 79960717037     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000996     Document Type: Article

References (7)

1. M. F. Schubert, S. Chhajed, J.K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, Appl. Phys. Lett. 91, 231114 (2007).
2. T.-Y. Tang, C.-H. Lin, Y.-S. Chen, W.-Y. Shiao, W.-M. Chang, C.-H. Liao, K.-C. Shen, C.-C. Yang, M.-C. Hsu, J.-H. Yeh, and T.-C. Hsu, IEEE Trans. Electron Dev. 57(1), Jan. (2010).
3. K. Hiramatsu, J. Phys.: Condens. Matter 13, 6961 (2001).
4. C. Liu, P. A. Shields, Q. Chen, D. W. E. Allsopp, W. N. Wang, C. R. Bowen, T.-L. Phan, and D. Cherns, Phys. Status Solidi C 7(1), 32 (2010).
5. L. T. Romano, C. G. Van de Walle, J. W. Ager III, W. Götz, and R. S. Kern, J. Appl. Phys. 87, 7745 (2000).
6. S. R. Lee, A. M. West, A. A. Allerman, K. E. Waldrip, D. M. Follstaedt, P. P. Provencio, D. D. Koleske, and C. R. Abernathy, Appl. Phys. Lett. 86, 241904 (2005).
7. Q. Li, J. J. Figiel, and G. T. Wang, Appl. Phys. Lett. 94, 231105 (2009).