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Applied Physics Letters

Volumn 95, Issue 3, 2009, Pages

Strain distribution and interface modulation of highly lattice-mismatched InN/GaN heterostructure nanowires

(7) Kim, Y H a Park, H J a Kim, K a Kim, C S a Yun, W S a Lee, J W b,c Kim, M D b

a Korea Research Institute of Standards and Science (South Korea)

b Chungnam National University (South Korea)

c WOOREE LST Co Ltd (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; CONCENTRATION PHENOMENA; GEOMETRIC PHASE ANALYSIS; HETEROSTRUCTURE; IN-PLANE COMPONENTS; INTERFACE STRUCTURES; LATTICE RECOVERY; LATTICE-MISMATCHED; MISFIT DISLOCATIONS; MISFIT STRAINS; OUT-OF-PLANE COMPONENTS; STRAIN BEHAVIORS; STRAIN DISTRIBUTIONS; TRANSMISSION ELECTRON MICROSCOPE;

ELECTRIC WIRE; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; NANOWIRES; PHASE INTERFACES; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY;

STRAIN;

EID: 67651240792 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3184541 Document Type: Article

Times cited : (22)

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