Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array

Journal of Applied Physics

Volumn 112, Issue 2, 2012, Pages

  Lethy, K J ^a   Edwards, P R ^a   Liu, C ^b   Wang, W N ^b   Martin, R W ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b University of Bath   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; CROSS SECTIONAL AREA; EPITAXIAL OVERGROWTH; GAN LAYERS; HIGH RESOLUTION; HIGH STRAINS; HYPERSPECTRAL IMAGING; M-SCALE; NANO SCALE; NANO-COLUMNS; NANOCOLUMN; OUT-DIFFUSION; PEAK SHIFT;

CATHODOLUMINESCENCE; EPITAXIAL GROWTH; GRAIN BOUNDARIES; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES;

GALLIUM NITRIDE;

EID: 84865480861     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4737418     Document Type: Article

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