Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires

Nanotechnology

Volumn 18, Issue 1, 2007, Pages

  Larsson, Magnus W ^a   Wagner, Jakob B ^a   Wallin, Mathias ^a   Håkansson, Paul ^a   Fröberg, Linus E ^a   Samuelson, Lars ^a   Wallenberg, L Reine ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL STRUCTURE; FINITE ELEMENT METHOD; HETEROJUNCTIONS; IMAGE RECONSTRUCTION; LATTICE CONSTANTS; NANOSTRUCTURED MATERIALS; OPTICAL RESOLVING POWER; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSMISSION ELECTRON MICROSCOPY;

PEAK FINDING TECHNIQUES; STRAIN DISTRIBUTION; WURTZITE STRUCTURES;

STRAIN MEASUREMENT;

EID: 33846834038     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/1/015504     Document Type: Article

References (32)

1. Bjork M T, Ohlsson B J, Thelander C, Persson A I, Deppert K, Wallenberg L R and Samuelson L 2002 Nanowire resonant tunnelling diodes Appl. Phys. Lett. 81 4458-60
2. Thelander C, Martensson T, Bjork M T, Ohlsson B J, Larsson M W, Wallenberg L R and Samuelson L 2003 Single-electron transistors in heterostructure nanowires Appl. Phys. Lett. 83 2052-4
3. Bjork M T, Fuhrer A, Hansen A E, Larsson M W, Froberg LE and Samuelson L 2005 Tunable effective g factor in InAs nanowire quantum dots Phys. Rev. B 72 201307
4. Bjork M T, Ohlsson B J, Sass T, Persson A I, Thelander C, Magnusson M H, Deppert K, Wallenberg L R and Samuelson L 2002 One-dimensional heterostructures in semiconductor nanowhiskers Appl. Phys. Lett. 80 1058-60
5. Tiwari S and Frank D J 1992 Empirical fit to band discontinuities and barrier heights in III-V alloy systems Appl. Phys. Lett. 60 630-2
6. Pryor C E and Pistol M E 2005 Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots Phys. Rev. B 72 205311
7. Niquet Y M 2006 Electronic and optical properties of InAs/GaAs nanowire superlattices Phys. Rev. B 74 155304
8. Carlsson A, Wallenberg L R, Persson C and Seifert W 1998 Strain state in semiconductor quantum dots on surfaces: a comparison of electron microscopy and finite element calculations Surf. Sci. 406 48-56
9. Kret S, Ruterana P, Rosenauer A and Gerthsen D 2001 Extracting quantitative information from high resolution electron microscopy Phys. Status Solidi b 227 247-95
10. Chen Y P, Reed J D, Schaff W J and Eastman L F 1994 Measurement of nonuniform distribution of strain in InGaAs/GaAs quantum wires Appl. Phys. Lett. 65 2202-4
11. Taraci J L, Hytch M J, Clement T, Peralta P, McCartney M R, Drucker J and Picraux S T 2005 Strain mapping in nanowires Nanotechnology 16 2365-71
12. Lyons D M, Ryan K M, Morris M A and Holmes J D 2002 Tailoring the optical properties of silicon nanowire arrays through strain Nano Lett. 2 811-6
13. Gutierrez H R, Magalhaes-Paniago R, Bortoleto J R R and Cotta M A 2004 Three-dimensional mapping of the strain anisotropy in self-assembled quantum-wires by grazing incidence x-ray diffraction Appl. Phys. Lett. 85 3581-3
14. Prieto J A, Armelles G, Priester C, Garcia J M, Gonzalez L and Garcia R 2000 Strain-induced optical anisotropy in self-organized quantum structures at the E-1 transition Appl. Phys. Lett. 76 2197-9
15. Ertekin E, Greaney P A, Chrzan D C and Sands T D 2005 Equilibrium limits of coherency in strained nanowire heterostructures J. Appl. Phys. 97 114325
16. Magnusson M H, Deppert K, Malm J-O, Bovin J-O and Samuelson L 1999 Gold nanoparticles: production, reshaping, and thermal charging J. Nanopart. Res. 1 243-51
17. Dick K A, Deppert K, Martensson T, Mandl B, Samuelson L and Seifert W 2005 Failure of the vapour-liquid-solid mechanism in Au-assisted MOVPE growth of InAs nanowires Nano Lett. 5 761-4
18. Persson A I, Larsson M W, Stenstrom S, Ohlsson B J, Samuelson L and Wallenberg L R 2004 Solid-phase diffusion mechanism for GaAs nanowire growth Nat. Mater. 3 677-81
19. Ohlsson B J, Bjork M T, Persson A I, Thelander C, Wallenberg L R, Magnusson M H, Deppert K and Samuelson L 2002 Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures Physica E 13 1126-30
20. Bovin J O, Alfredsson V, Karlsson G, Carlsson A, Blum Z and Terasaki O 1996 TEM-tomography of FAU-zeolite crystals containing Pt-clusters Ultramicroscopy 62 277-81
21. Martin R M 1972 Relation between elastic tensors of wurtzite and zincblende structure materials Phys. Rev. B 6 4546-53
22. Nichols D N, Rimai D S and Sladek R J 1980 Elastic anharmonicity of InP-its relationship to the high-pressure transition Solid State Commun. 36 667-9
23. Burenkov Y A, Davydov S Y and Nikanorov S P 1975 Elastic properties of indium-arsenide Sov.-Phys. Solid State 17 1446-7
24. Stadelmann P 2006 Jems Electron Microscopy Software, Java Version 3.0505W2006
25. Bierwolf R, Hohenstein M, Phillipp F, Brandt O, Crook GE and Ploog K 1993 Direct measurement of local lattice-distortions in strained layer structures by HREM Ultramicroscopy 49 273-85
26. Rosenauer A, Kaiser S, Reisinger T, Zweck J, Gebhardt W and Gerthsen D 1996 Digital analysis of high resolution transmission electron microscopy lattice images Optik 102 63-9
27. Galindo P L, Yãez A, Pizarro J, Guerrero E, Ben T and Molina S 2005 Proc. 14th Microscopy of Semiconducting Materials Conf. D-8 (Oxford, 2005)
28. Marks L D 1996 Wiener-filter enhancement of noisy HREM images Ultramicroscopy 62 43-52
29. Ottosen N S and Ristinmaa M 2005 The Mechanics of Constitutive Modeling (Amsterdam: Elsevier)
30. Hibbitt, Karlsson and Sorensen Inc 2004 ABAQUS/Standard Version 6.5
31. Tillmann K, Lentzen M and Rosenfeld R 2000 Impact of column bending in high-resolution transmission electron microscopy on the strain evaluation of GaAs/InAs/GaAs heterostructures Ultramicroscopy 83 111-28
32. Diao J K, Gall K and Dunn M L 2004 Atomistic simulation of the structure and elastic properties of gold nanowires J. Mech. Phys. Solids 52 1935-62