SiC MOSFET channel mobility dependence on substrate doping and temperature considering high density of interface traps

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 835-838

  Perez Tomas A ^a,b   Jennings, M R ^a   Mawby, P A ^a   Covington, J A ^a   Godignon, P ^b   Millan J ^b   Mestres, N ^c  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

Author keywords

Channel mobility; Coulomb scattering; Doping; Interface traps; MOSFET; Temperature

Indexed keywords

DEGRADATION; DOPING (ADDITIVES); ELECTRIC CHARGE; SILICON CARBIDE; SUBSTRATES; TEMPERATURE;

CHANNEL MOBILITY; COMMERCIAL SIMULATORS; COMPUTATIONAL RESULTS; COULOMB SCATTERING; FIELD-EFFECT MOBILITIES; IMPURITY CONCENTRATION; INTERFACE TRAPS; MOS-FET;

MOSFET DEVICES;

EID: 38449117363     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.835     Document Type: Conference Paper

References (6)

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