High channel mobility of 4H-SiC MOSFET fabricated on macro-stepped surface

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 695-698

  Masuda, Takeyoshi ^a   Harada, Shin ^a   Tsuno, Takashi ^a   Namikawa, Yasuo ^a   Kimoto, Tsunenobu ^b  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

4H SiC MOSFET; Channel mobility; Macro step; NO annealing

Indexed keywords

FABRICATION; POWER MOSFET; SILICON CARBIDE;

4H-SIC MOSFET; CHANNEL MOBILITY; INTERFACES STATE; LATERAL MOSFETS; MACRO-STEP; MOS INTERFACE; NO ANNEALING; POWER DEVICES; STEPPED SURFACES;

INTERFACE STATES;

EID: 63849108103     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.695     Document Type: Conference Paper

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