Doping of SiC by implantation of boron and aluminum

Physica Status Solidi (A) Applied Research

Volumn 162, Issue 1, 1997, Pages 277-298

  Troffer, T ^a   Schadt, M ^a   Frank, T ^a   Itoh, H ^a,c   Pensi, G ^a   Heindl, J ^a   Strunk, H P ^a   Maier, M ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; BORON; CHARGE CARRIERS; COLOR CENTERS; HALL EFFECT; ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES;

CARRIER MOBILITY; ELECTRICAL ACTIVITY;

SILICON CARBIDE;

EID: 0031191985     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199707)162:1<277::AID-PSSA277>3.0.CO;2-C     Document Type: Article

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