Interface properties of SiO2/4H-SiC(0001) with large off-angles formed by N2O oxidation

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 659-662

  Saitoh, Hiroaki ^a   Seki, Akinori ^a   Manabe, Akira ^a   Kimoto, Tsunenobu ^b  

^a TOYOTA MOTOR CORPORATION   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

Interface state density; MOS interface; N2O oxidation; Off angle; SIMS

Indexed keywords

OXIDATION; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICON CARBIDE; SILICON OXIDES;

CARBON AND NITROGEN; INTERFACE PROPERTY; INTERFACE STATE DENSITY; MOS INTERFACE; OFF-ANGLE; OFF-AXIS; OXIDE THICKNESS;

INTERFACE STATES;

EID: 38449089059     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.659     Document Type: Conference Paper

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