NiO resistive random access memory nanocapacitor array on graphene

ACS Nano

Volumn 4, Issue 5, 2010, Pages 2655-2658

  Son, Jong Yeog ^a   Shin, Young Han ^b   Kim, Hyungjun ^c   Jang, Hyun M ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b University of Ulsan   (South Korea)

^c Yonsei University   (South Korea)

Author keywords

Anodizing aluminum oxide; Graphene; Nanocapacitor; NiO; Resistive switching

Indexed keywords

ANODIC ALUMINUM OXIDE; ANODIZING ALUMINUM; ANODIZING ALUMINUM OXIDE; ATOMICALLY SMOOTH SURFACE; GRAPHENE SHEETS; INTERPORE DISTANCES; NANOCAPACITORS; NANOTEMPLATES; NB-DOPED SRTIO; PORE DIAMETERS; RESET VOLTAGE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; UNIPOLAR SWITCHING;

ALUMINUM; GRAPHITE; OXIDES; PLATINUM; RANDOM ACCESS STORAGE; SOIL CONSERVATION; STRONTIUM ALLOYS; SUBSTRATES; SWITCHING SYSTEMS;

GRAPHENE;

EID: 77952933126     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn100234x     Document Type: Article

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