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Electrochemical and Solid-State Letters

Volumn 13, Issue 3, 2010, Pages

The resistive switching mechanism of Ag/SrTiO3/Pt memory cells

(7) Yan, X B a Li, K a Yin, J a Xia, Y D a Guo, H X a Chen, L a Liu, Z G a

a NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT VOLTAGE; ELECTROCHEMICAL REACTIONS; MEMORY CELL; NANOFILAMENTS; ON-STATE RESISTANCE; POSITIVE VOLTAGE; PT ELECTRODE; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS; SRTIO; STATE RESISTANCE; TEMPERATURE DEPENDENCE; TIME DEPENDENCE;

DISSOLUTION; PLATINUM; SEMICONDUCTOR STORAGE; SWITCHING; SWITCHING SYSTEMS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 74849104254 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3279689 Document Type: Article

Times cited : (52)

References (21)

1
- 43549126477
- Resistive switching in transition metal oxides
- DOI 10.1016/S1369-7021(08)70119-6, PII S1369702108701196
- A. Sawa, Mater. Today 1369-7021, 11, 28 (2008). 10.1016/S1369-7021(08) 70119-6 (Pubitemid 351680723)
- (2008) Materials Today , vol.11 , Issue.6 , pp. 28-36
- Sawa, A.¹

2
- 33846428065
- A low-temperature-grown oxide diode as a new switch element for high-density, nonvolatile memories
- DOI 10.1002/adma.200601025
- M. Lee, S. Seo, D. Kim, S. Ahn, D. H. Seo, I. Yoo, I. Baek, D. Kim, I. Byun, S. Kim, Adv. Mater. 0935-9648, 19, 73 (2007). 10.1002/adma.200601025 (Pubitemid 46144812)
- (2007) Advanced Materials , vol.19 , Issue.1 , pp. 73-76
- Lee, M.-J.¹ Seo, S.² Kim, D.-C.³ Ahn, S.-E.⁴ Seo, D.H.⁵ Yoo, I.-K.⁶ Baek, I.-G.⁷ Kim, D.-S.⁸ Byun, I.-S.⁹ Kim, S.-H.¹⁰ Hwang, I.-R.¹¹ Kim, J.-S.¹² Jeon, S.-H.¹³ Park, B.H.¹⁴

3
- 67649504624
- 0163-1918
- H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M. -J. Tsai, Tech. Dig.-Int. Electron Devices Meet. 0163-1918, 2008, 297.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2008 , pp. 297
- Lee, H.Y.¹ Chen, P.S.² Wu, T.Y.³ Chen, Y.S.⁴ Wang, C.C.⁵ Tzeng, P.J.⁶ Lin, C.H.⁷ Chen, F.⁸ Lien, C.H.⁹ Tsai, M.-J.¹⁰

4
- 68249128656
- 0163-1918
- Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S. Mitani, S. Fujii, K. Katayama, M. Iijima, Tech. Dig.-Int. Electron Devices Meet. 0163-1918, 2008, 293.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2008 , pp. 293
- Wei, Z.¹ Kanzawa, Y.² Arita, K.³ Katoh, Y.⁴ Kawai, K.⁵ Muraoka, S.⁶ Mitani, S.⁷ Fujii, S.⁸ Katayama, K.⁹ Iijima, M.¹⁰

5
- 35748974883
- Nanoionics-based resistive switching memories
- DOI 10.1038/nmat2023, PII NMAT2023
- R. Waser and M. Aono, Nature Mater. 1476-1122, 6, 833 (2007). 10.1038/nmat2023 (Pubitemid 350064191)
- (2007) Nature Materials , vol.6 , Issue.11 , pp. 833-840
- Waser, R.¹ Aono, M.²

6
- 0001331485
- 0003-6951. 10.1063/1.126902
- A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. 0003-6951, 77, 139 (2000). 10.1063/1.126902
- (2000) Appl. Phys. Lett. , vol.77 , pp. 139
- Beck, A.¹ Bednorz, J.G.² Gerber, Ch.³ Rossel, C.⁴ Widmer, D.⁵

7
- 33846257227
- Field-induced resistive switching based on space-charge-limited current
- DOI 10.1063/1.2430912
- Y. D. Xia, W. Y. He, L. Chen, X. K. Meng, and Z. G. Liu, Appl. Phys. Lett. 0003-6951, 90, 022907 (2007). 10.1063/1.2430912 (Pubitemid 46105594)
- (2007) Applied Physics Letters , vol.90 , Issue.2 , pp. 022907
- Xia, Y.¹ He, W.² Chen, L.³ Meng, X.⁴ Liu, Z.⁵

8
- 58149239895
- 0163-1829. 10.1103/PhysRevB.78.235418
- N. Das, S. Tsui, X. Y. Xue, Y. Q. Wang, and C. W. Chu, Phys. Rev. B 0163-1829, 78, 235418 (2008). 10.1103/PhysRevB.78.235418
- (2008) Phys. Rev. B , vol.78 , pp. 235418
- Das, N.¹ Tsui, S.² Xue, X.Y.³ Wang, Y.Q.⁴ Chu, C.W.⁵

9
- 33745386456
- Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag La0.7 Ca0.3 MnO3 Pt heterostructures
- DOI 10.1103/PhysRevB.73.245427
- D. S. Shang, Q. Wang, L. D. Chen, R. Dong, X. M. Li, and W. Q. Zhang, Phys. Rev. B 0163-1829, 73, 245427 (2006). 10.1103/PhysRevB.73.245427 (Pubitemid 43945846)
- (2006) Physical Review B - Condensed Matter and Materials Physics , vol.73 , Issue.24 , pp. 245427
- Shang, D.S.¹ Wang, Q.² Chen, L.D.³ Dong, R.⁴ Li, X.M.⁵ Zhang, W.Q.⁶

10
- 0037416568
- 0003-6951. 10.1063/1.1556555
- L. Ma, S. Pyo, J. Ouyang, Q. Xu, and Y. Yang, Appl. Phys. Lett. 0003-6951, 82, 1419 (2003). 10.1063/1.1556555
- (2003) Appl. Phys. Lett. , vol.82 , pp. 1419
- Ma, L.¹ Pyo, S.² Ouyang, J.³ Xu, Q.⁴ Yang, Y.⁵

11
- 33846990409
- CuTCNQ resistive nonvolatile memories with a noble metal bottom electrode
- DOI 10.1063/1.2457342
- R. Müller, R. Naulaerts, J. Billen, J. Genoe, and P. Heremansb, Appl. Phys. Lett. 0003-6951, 90, 063503 (2007). 10.1063/1.2457342 (Pubitemid 46247706)
- (2007) Applied Physics Letters , vol.90 , Issue.6 , pp. 063503
- Muller, R.¹ Naulaerts, R.² Billen, J.³ Genoe, J.⁴ Heremans, P.⁵

12
- 33846258087
- 5 films
- DOI 10.1063/1.2431438
- X. F. Liang, Y. Chen, L. Chen, J. Yin, and Z. G. Liu, Appl. Phys. Lett. 0003-6951, 90, 022508 (2007). 10.1063/1.2431438 (Pubitemid 46105585)
- (2007) Applied Physics Letters , vol.90 , Issue.2 , pp. 022508
- Liang, X.F.¹ Chen, Y.² Chen, L.³ Yin, J.⁴ Liu, Z.G.⁵

13
- 65449146357
- 0003-6951. 10.1063/1.3123251
- L. Chen, Z. Liu, Y. Xia, K. Yin, L. Gao, and J. Yin, Appl. Phys. Lett. 0003-6951, 94, 162112 (2009). 10.1063/1.3123251
- (2009) Appl. Phys. Lett. , vol.94 , pp. 162112
- Chen, L.¹ Liu, Z.² Xia, Y.³ Yin, K.⁴ Gao, L.⁵ Yin, J.⁶

14
- 34848899459
- Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems
- DOI 10.1063/1.2793686
- H. X. Guo, B. Yang, L. Chen, Y. D. Xia, K. B. Yin, Z. G. Liu, and J. Yin, Appl. Phys. Lett. 0003-6951, 91, 133513 (2007). 10.1063/1.2793686 (Pubitemid 47502633)
- (2007) Applied Physics Letters , vol.91 , Issue.13 , pp. 133513
- Guo, X.¹ Schindler, C.² Menzel, S.³ Waser, R.⁴

15
- 67049132739
- 0003-6951. 10.1063/1.3133353
- J. P. Shi, Y. D. Zhao, H. J. Zhang, H. F. Tian, and X. P. Zhang, Appl. Phys. Lett. 0003-6951, 94, 192103 (2009). 10.1063/1.3133353
- (2009) Appl. Phys. Lett. , vol.94 , pp. 192103
- Shi, J.P.¹ Zhao, Y.D.² Zhang, H.J.³ Tian, H.F.⁴ Zhang, X.P.⁵

16
- 33947268040
- Mechanism of electric-pulse-induced resistance switching in manganites
- DOI 10.1103/PhysRevLett.98.116601
- M. Quintero, P. Levy, A. G. Leyva, and M. J. Rozenberg, Phys. Rev. Lett. 0031-9007, 98, 116601 (2007). 10.1103/PhysRevLett.98.116601 (Pubitemid 46417511)
- (2007) Physical Review Letters , vol.98 , Issue.11 , pp. 116601
- Quintero, M.¹ Levy, P.² Leyva, A.G.³ Rozenberg, M.J.⁴

17
- 65249125383
- 1530-6984. 10.1021/nl900006g
- Y. C. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, Nano Lett. 1530-6984, 9, 1636 (2009). 10.1021/nl900006g
- (2009) Nano Lett. , vol.9 , pp. 1636
- Yang, Y.C.¹ Pan, F.² Liu, Q.³ Liu, M.⁴ Zeng, F.⁵

18
- 33947326575
- 2 films
- DOI 10.1063/1.2712777
- K. Tsunoda, Y. Fukuzumi, J. R. Jameson, Z. Wang, P. B. Griffin, and Y. Nishi, Appl. Phys. Lett. 0003-6951, 90, 113501 (2007). 10.1063/1.2712777 (Pubitemid 46439844)
- (2007) Applied Physics Letters , vol.90 , Issue.11 , pp. 113501
- Tsunoda, K.¹ Fukuzumi, Y.² Jameson, J.R.³ Wang, Z.⁴ Griffin, P.B.⁵ Nishi, Y.⁶

19
- 57349143757
- 0003-6951. 10.1063/1.3039079
- W. Guan, M. Liu, S. Long, Q. Liu, and W. Wang, Appl. Phys. Lett. 0003-6951, 93, 223506 (2008). 10.1063/1.3039079
- (2008) Appl. Phys. Lett. , vol.93 , pp. 223506
- Guan, W.¹ Liu, M.² Long, S.³ Liu, Q.⁴ Wang, W.⁵

20
- 33746298191
- Temperature dependence of the resistance of metallic nanowires of diameter ≥15 nm: Applicability of Bloch-Gruneisen theorem
- DOI 10.1103/PhysRevB.74.035426
- A. Bid, A. Bora, and A. K. Raychaudhuri, Phys. Rev. B 0163-1829, 74, 035426 (2006). 10.1103/PhysRevB.74.035426 (Pubitemid 44107250)
- (2006) Physical Review B - Condensed Matter and Materials Physics , vol.74 , Issue.3 , pp. 035426
- Bid, A.¹ Bora, A.² Raychaudhuri, A.K.³

21
- 35649004338
- 3 heterojunction
- DOI 10.1063/1.2803317
- M. C. Ni, S. M. Guo, H. F. Tian, Y. G. Zhao, and J. Q. Li, Appl. Phys. Lett. 0003-6951, 91, 183502 (2007). 10.1063/1.2803317 (Pubitemid 350037238)
- (2007) Applied Physics Letters , vol.91 , Issue.18 , pp. 183502
- Ni, M.C.¹ Guo, S.M.² Tian, H.F.³ Zhao, Y.G.⁴ Li, J.Q.⁵

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