Band offsets and charge storage characteristics of atomic layer deposited high- k Hf O2 Ti O2 multilayers

Applied Physics Letters

Volumn 90, Issue 26, 2007, Pages

  Maikap, S ^a   Wang, T Y ^b   Tzeng, P J ^c   Lin, C H ^c   Tien, T C ^c   Lee, L S ^c   Yang, J R ^b   Tsai, M J ^c  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; BAND STRUCTURE; FILM THICKNESS; HAFNIUM COMPOUNDS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND OFFSETS; CHARGE STORAGE; LAYER-BY-LAYER STRUCTURES;

MULTILAYERS;

EID: 34547296613     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2751579     Document Type: Article

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