Al2O3-based RRAM using atomic layer deposition (ALD) with 1-μa RESET current

IEEE Electron Device Letters

Volumn 31, Issue 12, 2010, Pages 1449-1451

  Wu, Yi ^a   Lee, Byoungil ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

Author keywords

Al2O3; atomic layer deposition (ALD); resistive random access memory (RRAM); resistive switching

Indexed keywords

AL2O3; DEPOSITION TEMPERATURES; HIGHER TEMPERATURES; PURE ALUMINUM; RESET CURRENTS; RESISTANCE RATIO; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SWITCHING BEHAVIORS; UNIPOLAR SWITCHING; VOLTAGE MARGIN;

ALUMINUM; ATOMIC LAYER DEPOSITION; RANDOM ACCESS STORAGE; SWITCHING; SWITCHING SYSTEMS;

ATOMS;

EID: 78649447784     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2074177     Document Type: Article

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