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Volumn 10, Issue 2, 2011, Pages 338-343

Electroforming and resistance switching characteristics of silver-doped MSQ with inert electrodes

Author keywords

Methylsilsesquioxane (MSQ); nonvolatile memory; resistance switching; resistive switching; solid electrolyte

Indexed keywords

13.5 NM; BOTTOM ELECTRODES; CROSS JUNCTION; FORMING PROCESS; GAP WIDTHS; INERT ELECTRODES; MEMORY DEVICE; METHYLSILSESQUIOXANE; MSQ FILMS; NONVOLATILE MEMORY; RESISTANCE SWITCHING; RESISTANCE SWITCHING EFFECT; RESISTIVE SWITCHING; SEM; SEM OBSERVATION; SILVER IONS; UNIPOLAR SWITCHING;

EID: 79952660877     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2041669     Document Type: Article
Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.