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Journal of Applied Physics

Volumn 109, Issue 3, 2011, Pages

Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices

(7) Ielmini, D a Spiga, S b Nardi, F a Cagli, C a Lamperti, A b Cianci, E b Fanciulli, M b,c

a POLITECNICO DI MILANO (Italy)

b LABORATORIO MDM (Italy)

c UNIVERSITY OF MILANO BICOCCA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MODE; CONDUCTIVE FILAMENTS; CONDUCTIVITY CHANGES; ELECTRODE AREAS; ELECTRONIC STORAGE; LOW RESISTANCE; MEMORY STATE; METAL OXIDES; NEW TECHNOLOGIES; NON-VOLATILE; NON-VOLATILE MEMORY APPLICATION; RESISTANCE STATE; RESISTIVE STATE; RESISTIVE SWITCHING MEMORIES; SCALING ANALYSIS; SCALING CAPABILITY; SUBMICROMETERS; SWITCHING MECHANISM; SWITCHING OPERATIONS; SWITCHING PARAMETERS; SWITCHING PHENOMENON; TEMPERATURE-DEPENDENT RESISTANCE; TRANSITION-METAL OXIDES;

NICKEL OXIDE; NONVOLATILE STORAGE; SWITCHING; SWITCHING SYSTEMS; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

RANDOM ACCESS STORAGE;

EID: 79951817607 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3544499 Document Type: Article

Times cited : (70)

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