SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 109, Issue 3, 2011, Pages

Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices

(7) Ielmini, D a Spiga, S b Nardi, F a Cagli, C a Lamperti, A b Cianci, E b Fanciulli, M b,c

a POLITECNICO DI MILANO (Italy)

b LABORATORIO MDM (Italy)

c UNIVERSITY OF MILANO BICOCCA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MODE; CONDUCTIVE FILAMENTS; CONDUCTIVITY CHANGES; ELECTRODE AREAS; ELECTRONIC STORAGE; LOW RESISTANCE; MEMORY STATE; METAL OXIDES; NEW TECHNOLOGIES; NON-VOLATILE; NON-VOLATILE MEMORY APPLICATION; RESISTANCE STATE; RESISTIVE STATE; RESISTIVE SWITCHING MEMORIES; SCALING ANALYSIS; SCALING CAPABILITY; SUBMICROMETERS; SWITCHING MECHANISM; SWITCHING OPERATIONS; SWITCHING PARAMETERS; SWITCHING PHENOMENON; TEMPERATURE-DEPENDENT RESISTANCE; TRANSITION-METAL OXIDES;

NICKEL OXIDE; NONVOLATILE STORAGE; SWITCHING; SWITCHING SYSTEMS; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

RANDOM ACCESS STORAGE;

EID: 79951817607 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3544499 Document Type: Article

Times cited : (71)

References (41)

1
- 35748974883
- Nanoionics-based resistive switching memories
- DOI 10.1038/nmat2023, PII NMAT2023
- R. Waser and M. Aono, Nature Mater. 1476-1122 6, 833 (2007). 10.1038/nmat2023 (Pubitemid 350064191)
- (2007) Nature Materials , vol.6 , Issue.11 , pp. 833-840
- Waser, R.¹ Aono, M.²

2
- 19944434155
- Reproducible resistance switching in polycrystalline NiO films
- DOI 10.1063/1.1831560
- S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D. -S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J. -S. Kim, J. S. Choi, and B. H. Park, Appl. Phys. Lett. 0003-6951 85, 5655 (2004). 10.1063/1.1831560 (Pubitemid 40162553)
- (2004) Applied Physics Letters , vol.85 , Issue.23 , pp. 5655-5657
- Seo, S.¹ Lee, M.J.² Seo, D.H.³ Jeoung, E.J.⁴ Suh, D.-S.⁵ Joung, Y.S.⁶ Yoo, I.K.⁷ Hwang, I.R.⁸ Kim, S.H.⁹ Byun, I.S.¹⁰ Kim, J.-S.¹¹ Choi, J.S.¹² Park, B.H.¹³

3
- 21644443347
- 0163-1918.
- I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D. -S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U. -In Chung, and J. T. Moon, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2004, 587.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2004 , pp. 587
- Baek, I.G.¹ Lee, M.S.² Seo, S.³ Lee, M.J.⁴ Seo, D.H.⁵ Suh, D.-S.⁶ Park, J.C.⁷ Park, S.O.⁸ Kim, H.S.⁹ Yoo, I.K.¹⁰ Chung, U.-I.¹¹ Moon, J.T.¹²

4
- 59849099356
- 0018-9383, 10.1109/TED.2008.2010583
- U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, IEEE Trans. Electron Devices 0018-9383 56, 186 (2009). 10.1109/TED.2008.2010583
- (2009) IEEE Trans. Electron Devices , vol.56 , pp. 186
- Russo, U.¹ Ielmini, D.² Cagli, C.³ Lacaita, A.L.⁴

5
- 23944447615
- 2 thin films grown by atomic-layer deposition
- DOI 10.1063/1.2001146, 033715
- B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, J. Appl. Phys. 0021-8979 98, 033715 (2005). 10.1063/1.2001146 (Pubitemid 41204789)
- (2005) Journal of Applied Physics , vol.98 , Issue.3 , pp. 1-10
- Choi, B.J.¹ Jeong, D.S.² Kim, S.K.³ Rohde, C.⁴ Choi, S.⁵ Oh, J.H.⁶ Kim, H.J.⁷ Hwang, C.S.⁸ Szot, K.⁹ Waser, R.¹⁰ Reichenberg, B.¹¹ Tiedke, S.¹²

6
- 67650621591
- 0741-3106, 10.1109/LED.2009.2021001
- W. Wang, S. Fujita, and S. S. Wong, IEEE Electron Device Lett. 0741-3106 30, 733 (2009). 10.1109/LED.2009.2021001
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 733
- Wang, W.¹ Fujita, S.² Wong, S.S.³

7
- 58149247724
- 0021-8979, 10.1063/1.3041475
- Y. -M. Kim and J. -S. Lee, J. Appl. Phys. 0021-8979 104, 114115 (2008). 10.1063/1.3041475
- (2008) J. Appl. Phys. , vol.104 , pp. 114115
- Kim, Y.-M.¹ Lee, J.-S.²

8
- 50249152925
- 0163-1918.
- M. -J. Lee, Y. Park, B. -S. Kang, S. -E. Ahn, C. Lee, K. Kim, W. Xianyu, G. Stefanovich, J. -H. Lee, S. -J. Chung, Y. -H. Kim, C. -S. Lee, J. -B. Park, I. -G. Baek, and I. -K. Yoo, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 771.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2007 , pp. 771
- Lee, M.-J.¹ Park, Y.² Kang, B.-S.³ Ahn, S.-E.⁴ Lee, C.⁵ Kim, K.⁶ Xianyu, W.⁷ Stefanovich, G.⁸ Lee, J.-H.⁹ Chung, S.-J.¹⁰ Kim, Y.-H.¹¹ Lee, C.-S.¹² Park, J.-B.¹³ Baek, I.-G.¹⁴ Yoo, I.-K.¹⁵

9
- 33645889383
- 0038-1101, 10.1016/0038-1101(64)90131-5
- J. F. Gibbons and W. E. Beadle, Solid-State Electron. 0038-1101 7, 785 (1964). 10.1016/0038-1101(64)90131-5
- (1964) Solid-State Electron. , vol.7 , pp. 785
- Gibbons, J.F.¹ Beadle, W.E.²

10
- 68949178846
- 0038-1098, 10.1016/j.ssc.2009.06.033
- C. H. Kim, H. B. Moon, S. S. Min, Y. H. Jang, and J. H. Cho, Solid State Commun. 0038-1098 149, 1611 (2009). 10.1016/j.ssc.2009.06.033
- (2009) Solid State Commun. , vol.149 , pp. 1611
- Kim, C.H.¹ Moon, H.B.² Min, S.S.³ Jang, Y.H.⁴ Cho, J.H.⁵

11
- 59849127081
- 0018-9383, 10.1109/TED.2008.2010584
- U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, IEEE Trans. Electron Devices 0018-9383 56, 193 (2009). 10.1109/TED.2008.2010584
- (2009) IEEE Trans. Electron Devices , vol.56 , pp. 193
- Russo, U.¹ Ielmini, D.² Cagli, C.³ Lacaita, A.L.⁴

12
- 68349158917
- 0018-9383, 10.1109/TED.2009.2024046
- C. Cagli, F. Nardi, and D. Ielmini, IEEE Trans. Electron Devices 0018-9383 56, 1712 (2009). 10.1109/TED.2009.2024046
- (2009) IEEE Trans. Electron Devices , vol.56 , pp. 1712
- Cagli, C.¹ Nardi, F.² Ielmini, D.³

13
- 60349087905
- 0003-6951, 10.1063/1.3081401
- D. Ielmini, C. Cagli, and F. Nardi, Appl. Phys. Lett. 0003-6951 94, 063511 (2009). 10.1063/1.3081401
- (2009) Appl. Phys. Lett. , vol.94 , pp. 063511
- Ielmini, D.¹ Cagli, C.² Nardi, F.³

14
- 47349131110
- 0556-2805, 10.1103/PhysRevB.78.035308
- D. Ielmini, Phys. Rev. B 0556-2805 78, 035308 (2008). 10.1103/PhysRevB.78.035308
- (2008) Phys. Rev. B , vol.78 , pp. 035308
- Ielmini, D.¹

15
- 76649133422
- 1748-3387, 10.1038/nnano.2009.456
- D. -H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X. -S. Li, G. -S. Park, B. Lee, S. Han, M. Kim, and C. S. Hwang, Nat. Nanotechnol. 1748-3387 5, 148 (2010). 10.1038/nnano.2009.456
- (2010) Nat. Nanotechnol. , vol.5 , pp. 148
- Kwon, D.-H.¹ Kim, K.M.² Jang, J.H.³ Jeon, J.M.⁴ Lee, M.H.⁵ Kim, G.H.⁶ Li, X.-S.⁷ Park, G.-S.⁸ Lee, B.⁹ Han, S.¹⁰ Kim, M.¹¹ Hwang, C.S.¹²

16
- 51849111923
- 0013-4651, 10.1149/1.2965456
- H. L. Lu, G. Scarel, C. Wiemer, M. Perego, S. Spiga, and M. Fanciulli, J. Electrochem. Soc. 0013-4651 155, H807 (2008). 10.1149/1.2965456
- (2008) J. Electrochem. Soc. , vol.155 , pp. 807
- Lu, H.L.¹ Scarel, G.² Wiemer, C.³ Perego, M.⁴ Spiga, S.⁵ Fanciulli, M.⁶

17
- 56649099053
- 0167-9317, 10.1016/j.mee.2008.09.018
- S. Spiga, A. Lamperti, C. Wiemer, M. Perego, E. Cianci, G. Tallarida, H. L. Lu, M. Alia, F. G. Volpe, and M. Fanciulli, Microelectron. Eng. 0167-9317 85, 2414 (2008) 10.1016/j.mee.2008.09.018
- (2008) Microelectron. Eng. , vol.85 , pp. 2414
- Spiga, S.¹ Lamperti, A.² Wiemer, C.³ Perego, M.⁴ Cianci, E.⁵ Tallarida, G.⁶ Lu, H.L.⁷ Alia, M.⁸ Volpe, F.G.⁹ Fanciulli, M.¹⁰

18
- 56649092816
- 0167-9317, 10.1016/j.mee.2008.09.039
- A. Lamperti, S. Spiga, H. L. Lu, C. Wiemer, M. Perego, E. Cianci, M. Alia, and M. Fanciulli, Microelectron. Eng. 0167-9317 85, 2425 (2008). 10.1016/j.mee.2008.09.039
- (2008) Microelectron. Eng. , vol.85 , pp. 2425
- Lamperti, A.¹ Spiga, S.² Lu, H.L.³ Wiemer, C.⁴ Perego, M.⁵ Cianci, E.⁶ Alia, M.⁷ Fanciulli, M.⁸

19
- 76549117989
- 1938-5862 , 10.1149/1.3206640
- S. Spiga, A. Lamperti, E. Cianci, F. G. Volpe, and M. Fanciulli, ECS Trans. 1938-5862 25 (6), 411 (2009). 10.1149/1.3206640
- (2009) ECS Trans. , vol.25 , Issue.6 , pp. 411
- Spiga, S.¹ Lamperti, A.² Cianci, E.³ Volpe, F.G.⁴ Fanciulli, M.⁵

20
- 79951845122
- ICSD, Inorganic Crystal Structure Database, Fachinformationzentrum Karlsruhe, file no. 61324.
- ICSD, Inorganic Crystal Structure Database, Fachinformationzentrum Karlsruhe, (2003) file no. 61324.
- (2003)

21
- 79951837580
- in, edited by J. M. Walls (Cambridge University Press, Cambridge)
- D. E. Skyes, in Methods of Surface Analysis, edited by, J. M. Walls, (Cambridge University Press, Cambridge, 1989), p. 242.
- (1989) Methods of Surface Analysis , pp. 242
- Skyes, D.E.¹

22
- 50249141738
- 0163-1918.
- U. Russo, D. Ielmini, C. Cagli, A. L. Lacaita, S. Spiga, C. Wiemer, M. Perego, and M. Fanciulli, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 775.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2007 , pp. 775
- Russo, U.¹ Ielmini, D.² Cagli, C.³ Lacaita, A.L.⁴ Spiga, S.⁵ Wiemer, C.⁶ Perego, M.⁷ Fanciulli, M.⁸

23
- 36049053305
- 0031-9007, 10.1103/PhysRevLett.21.1450
- S. R. Ovshinsky, Phys. Rev. Lett. 0031-9007 21, 1450 (1968). 10.1103/PhysRevLett.21.1450
- (1968) Phys. Rev. Lett. , vol.21 , pp. 1450
- Ovshinsky, S.R.¹

24
- 0019026872
- THRESHOLD SWITCHING IN CHALCOGENIDE-GLASS THIN FILMS
- DOI 10.1063/1.328036
- D. Adler, M. S. Shur, M. Silver, and S. R. Ovshinsky, J. Appl. Phys. 0021-8979 51, 3289 (1980). 10.1063/1.328036 (Pubitemid 11441240)
- (1980) Journal of Applied Physics , vol.51 , Issue.6 , pp. 3289-3309
- Adler, D.¹ Shur, M.S.² Silver, M.³ Ovshinsky, S.R.⁴

25
- 45149085112
- 0163-1918.
- Y. -C. Chen, C. T. Rettner, S. Raoux, G. W. Burr, S. H. Chen, R. M. Shelby, M. Salinga, W. P. Risk, T. D. Happ, G. M. McClelland, M. Breitwisch, A. Schrott, J. B. Philipp, M. H. Lee, R. Cheek, T. Nirschl, M. Lamorey, C. F. Chen, E. Joseph, S. Zaidi, B. Yee, H. L. Lung, R. Bergmann, and C. Lam, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2006, 777.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2006 , pp. 777
- Chen, Y.-C.¹ Rettner, C.T.² Raoux, S.³ Burr, G.W.⁴ Chen, S.H.⁵ Shelby, R.M.⁶ Salinga, M.⁷ Risk, W.P.⁸ Happ, T.D.⁹ McClelland, G.M.¹⁰ Breitwisch, M.¹¹ Schrott, A.¹² Philipp, J.B.¹³ Lee, M.H.¹⁴ Cheek, R.¹⁵ Nirschl, T.¹⁶ Lamorey, M.¹⁷ Chen, C.F.¹⁸ Joseph, E.¹⁹ Zaidi, S.²⁰ more..

26
- 34248373793
- Evidence for trap-limited transport in the subthreshold conduction regime of chalcogenide glasses
- DOI 10.1063/1.2737137
- D. Ielmini and Y. Zhang, Appl. Phys. Lett. 0003-6951 90, 192102 (2007). 10.1063/1.2737137 (Pubitemid 46738091)
- (2007) Applied Physics Letters , vol.90 , Issue.19 , pp. 192102
- Ielmini, D.¹ Zhang, Y.²

27
- 54949089222
- 0935-9648, 10.1002/adma.200702081
- S. -E. Ahn, M. -J. Lee, Y. Park, B. S. Kang, C. B. Lee, K. H. Kim, S. Seo, D. -S. Suh, D. -C. Kim, J. Hur, W. Xianyu, G. Stefanovich, H. Yin, I. -K. Yoo, J. -H. Lee, J. -B. Park, I. -G. Baek, and B. H. Park, Adv. Mater. 0935-9648 20, 924 (2008). 10.1002/adma.200702081
- (2008) Adv. Mater. , vol.20 , pp. 924
- Ahn, S.-E.¹ Lee, M.-J.² Park, Y.³ Kang, B.S.⁴ Lee, C.B.⁵ Kim, K.H.⁶ Seo, S.⁷ Suh, D.-S.⁸ Kim, D.-C.⁹ Hur, J.¹⁰ Xianyu, W.¹¹ Stefanovich, G.¹² Yin, H.¹³ Yoo, I.-K.¹⁴ Lee, J.-H.¹⁵ Park, J.-B.¹⁶ Baek, I.-G.¹⁷ Park, B.H.¹⁸

28
- 44349155762
- 1862-6254, 10.1002/pssr.200701205
- J. -B. Yun, S. Kim, S. Seo, M. -J. Lee, D. -C. Kim, S. -E. Ahn, Y. Park, J. Kim, and H. Shin, Phys. Status Solidi (RRL) 1862-6254 1, 280 (2007). 10.1002/pssr.200701205
- (2007) Phys. Status Solidi (RRL) , vol.1 , pp. 280
- Yun, J.-B.¹ Kim, S.² Seo, S.³ Lee, M.-J.⁴ Kim, D.-C.⁵ Ahn, S.-E.⁶ Park, Y.⁷ Kim, J.⁸ Shin, H.⁹

29
- 44349102407
- Interpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin films
- DOI 10.1063/1.2936087
- I. K. Yoo, B. S. Kang, Y. D. Park, M. J. Lee, and Y. Park, Appl. Phys. Lett. 0003-6951 92, 202112 (2008). 10.1063/1.2936087 (Pubitemid 351733895)
- (2008) Applied Physics Letters , vol.92 , Issue.20 , pp. 202112
- Yoo, I.K.¹ Kang, B.S.² Park, Y.D.³ Lee, M.J.⁴ Park, Y.⁵

30
- 3342915797
- 0741-3106, 10.1109/LED.2004.831219
- D. Ielmini, A. L. Lacaita, A. Pirovano, F. Pellizzer, and R. Bez, IEEE Electron Device Lett. 0741-3106 25, 507 (2004). 10.1109/LED.2004.831219
- (2004) IEEE Electron Device Lett. , vol.25 , pp. 507
- Ielmini, D.¹ Lacaita, A.L.² Pirovano, A.³ Pellizzer, F.⁴ Bez, R.⁵

31
- 44349114419
- O3 -metal heterostructures
- DOI 10.1063/1.2932148
- M. Hasan, R. Dong, H. J. Choi, D. S. Lee, D. -J. Seong, M. B. Pyun, and H. Hwang, Appl. Phys. Lett. 0003-6951 92, 202102 (2008). 10.1063/1.2932148 (Pubitemid 351733886)
- (2008) Applied Physics Letters , vol.92 , Issue.20 , pp. 202102
- Hasan, M.¹ Dong, R.² Choi, H.J.³ Lee, D.S.⁴ Seong, D.-J.⁵ Pyun, M.B.⁶ Hwang, H.⁷

32
- 79951827732
- Proceedings of 9th Annual Non-Volatile Memory Technology Symposium (IEEE, New York)
- R. Meyer, L. Schloss, J. Brewer, R. Lambertson, W. Kinney, J. Sanchez, and D. Rinerson, Proceedings of 9th Annual Non-Volatile Memory Technology Symposium (IEEE, New York, 2008), p. 54.
- (2008) , pp. 54
- Meyer, R.¹ Schloss, L.² Brewer, J.³ Lambertson, R.⁴ Kinney, W.⁵ Sanchez, J.⁶ Rinerson, D.⁷

33
- 43749088059
- Sub-100-μA reset current of nickel oxide resistive memory through control of filamentary conductance by current limit of MOSFET
- DOI 10.1109/TED.2008.919385
- Y. Sato, K. Tsunoda, K. Kinoshita, H. Noshiro, M. Aoki, and Y. Sugiyama, IEEE Trans. Electron Devices 0018-9383 55, 1185 (2008). 10.1109/TED.2008.919385 (Pubitemid 351689510)
- (2008) IEEE Transactions on Electron Devices , vol.55 , Issue.5 , pp. 1185-1191
- Sato, Y.¹ Tsunoda, K.² Kinoshita, K.³ Noshiro, H.⁴ Aoki, M.⁵ Sugiyama, Y.⁶

34
- 48249129194
- 0003-6951, 10.1063/1.2959065
- K. Kinoshita, K. Tsunoda, Y. Sato, H. Noshiro, S. Yagaki, M. Aoki, and Y. Sugiyama, Appl. Phys. Lett. 0003-6951 93, 033506 (2008). 10.1063/1.2959065
- (2008) Appl. Phys. Lett. , vol.93 , pp. 033506
- Kinoshita, K.¹ Tsunoda, K.² Sato, Y.³ Noshiro, H.⁴ Yagaki, S.⁵ Aoki, M.⁶ Sugiyama, Y.⁷

35
- 79951833789
- IEEE International Memory Worksho(IMW).
- F. Nardi, D. Ielmini, C. Cagli, S. Spiga, M. Fanciulli, L. Goux, and D. J. Wouters, IEEE International Memory Workshop (IMW), 66 (2010).
- (2010) , pp. 66
- Nardi, F.¹ Ielmini, D.² Cagli, C.³ Spiga, S.⁴ Fanciulli, M.⁵ Goux, L.⁶ Wouters, D.J.⁷

36
- 67649504624
- 0163-1918.
- H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M. -J. Tsai, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2008, 297.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2008 , pp. 297
- Lee, H.Y.¹ Chen, P.S.² Wu, T.Y.³ Chen, Y.S.⁴ Wang, C.C.⁵ Tzeng, P.J.⁶ Lin, C.H.⁷ Chen, F.⁸ Lien, C.H.⁹ Tsai, M.-J.¹⁰

37
- 76449095917
- 0003-6951, 10.1063/1.3304167
- D. Ielmini, F. Nardi, and C. Cagli, Appl. Phys. Lett. 0003-6951 96, 053503 (2010). 10.1063/1.3304167
- (2010) Appl. Phys. Lett. , vol.96 , pp. 053503
- Ielmini, D.¹ Nardi, F.² Cagli, C.³

38
- 58149231291
- 0018-9200, 10.1109/JSSC.2008.2006439
- F. Bedeschi, R. Fackenthal, C. Resta, E. M. Donz̀, M. Jagasivamani, E. C. Buda, F. Pellizzer, D. W. Chow, A. Cabrini, G. M. A. Calvi, R. Faravelli, A. Fantini, G. Torelli, D. Mills, R. Gastaldi, and G. Casagrande, IEEE J. Solid-State Circuits 0018-9200 44, 217 (2009). 10.1109/JSSC.2008.2006439
- (2009) IEEE J. Solid-State Circuits , vol.44 , pp. 217
- Bedeschi, F.¹ Fackenthal, R.² Resta, C.³ Donz̀, E.M.⁴ Jagasivamani, M.⁵ Buda, E.C.⁶ Pellizzer, F.⁷ Chow, D.W.⁸ Cabrini, A.⁹ Calvi, G.M.A.¹⁰ Faravelli, R.¹¹ Fantini, A.¹² Torelli, G.¹³ Mills, D.¹⁴ Gastaldi, R.¹⁵ Casagrande, G.¹⁶

39
- 77950073765
- 0741-3106, 10.1109/LED.2010.2040799
- D. Ielmini, F. Nardi, C. Cagli, and A. L. Lacaita, IEEE Electron Device Lett. 0741-3106 31, 353 (2010). 10.1109/LED.2010.2040799
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 353
- Ielmini, D.¹ Nardi, F.² Cagli, C.³ Lacaita, A.L.⁴

40
- 33646414588
- 10.1021/j100826a039
- M. O'Keeffe and W. J. Moore, J. Phys. Chem. 65, 1438 (1961). 10.1021/j100826a039
- (1961) J. Phys. Chem. , vol.65 , pp. 1438
- O'Keeffe, M.¹ Moore, W.J.²

41
- 79951828363
- as discussed at IEEE Semiconductor Interface Specialist Conference (SISC), San Diego, CA, December 2-4.
- D. Ielmini, F. Nardi, and C. Cagli, as discussed at IEEE Semiconductor Interface Specialist Conference (SISC), San Diego, CA, December 2-4, 2010.
- (2010)
- Ielmini, D.¹ Nardi, F.² Cagli, C.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.