Study on resistance switching properties of Na 0.5Bi 0.5TiO 3 thin films using impedance spectroscopy

Nanoscale Research Letters

Volumn 4, Issue 11, 2009, Pages 1309-1314

  Zhang, Ting ^a   Zhang, Xinan ^a   Ding, Linghong ^a   Zhang, Weifeng ^a  

^a HENAN UNIVERSITY   (China)

Author keywords

Impedance spectroscopy; Interfacial characteristics; Na 0.5Bi 0.5TiO 3 (NBT) thin films; Oxygen vacancies; Resistance switching

Indexed keywords

AU ELECTRODES; CONDUCTING GLASS; DC BIAS; ELECTRICAL CHARACTERISTIC; FLUORINE DOPED TIN OXIDE; HIGH POTENTIAL; HIGH-RESISTANCE STATE; IMPEDANCE SPECTROSCOPY; INTERFACIAL CHARACTERISTICS; LOCAL IMPEDANCE; NA 0.5BI 0.5TIO 3 (NBT) THIN FILMS; NEGATIVE DIFFERENTIAL RESISTANCES; NON-VOLATILE MEMORY APPLICATION; ON-RESISTANCE; RESISTANCE SWITCHING; ROOM TEMPERATURE; SECOND IONIZATION; SOL-GEL METHODS; TIO;

CONDUCTIVE FILMS; FLUORINE; GOLD; OXIDE FILMS; OXYGEN; SODIUM; SOL-GEL PROCESS; SWITCHING; THIN FILMS; TIN;

OXYGEN VACANCIES;

EID: 70350580978     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-009-9397-4     Document Type: Article

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