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Electrochemical and Solid-State Letters

Volumn 14, Issue 8, 2011, Pages

A HfO2 thin film resistive switch based on conducting atomic force microscopy

(6) Son, J Y a Kim, D Y b Kim, H b Maeng, W J c Shin, Y S d Shin, Y H e

a Kyung Hee University (South Korea)

b Yonsei University (South Korea)

c Samsung Institute of Technology (South Korea)

d Pohang University of Science and Technology (POSTECH) (South Korea)

e University of Ulsan (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING ATOMIC FORCE MICROSCOPY; DOT DIAMETER; METALLIZATION TECHNIQUES; NANO SCALE; NANO-DOT ARRAYS; NANODOTS; NANOTEMPLATES; PT ELECTRODE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING BEHAVIORS;

ATOMIC FORCE MICROSCOPY; GOLD; HAFNIUM OXIDES; NANOSTRUCTURED MATERIALS; PLATINUM; SWITCHING SYSTEMS; THIN FILMS;

RANDOM ACCESS STORAGE;

EID: 79959202952 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3574526 Document Type: Article

Times cited : (18)

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