High- κ Hf O2 nanocrystal memory capacitors prepared by phase separation of atomic-layer-deposited Hf O2 Al2 O3 nanomixtures

Journal of the Electrochemical Society

Volumn 156, Issue 3, 2009, Pages

  Maikap, S ^a   Das, Atanu ^a   Wang, T Y ^a   Tien, T C ^b   Chang, L B ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; ELECTRODEPOSITION; HAFNIUM; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; OZONE WATER TREATMENT; PHASE MODULATION; PHASE SEPARATION; PLATINUM; PROGRAMMING THEORY; SEMICONDUCTOR STORAGE; TRANSMISSION ELECTRON MICROSCOPY; WINDOWS;

ATOMIC-LAYER-DEPOSITED; AVERAGE DIAMETERS; CHARGE CONFINEMENTS; CHARGE STORAGES; ELECTRICAL CHARACTERISTICS; ELEVATED TEMPERATURES; GATE VOLTAGES; HIGH TEMPERATURES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; LAYER BY LAYERS; MEMORY WINDOWS; NANOCRYSTAL MEMORIES; PROGRAMMING VOLTAGES; X-RAY PHOTOELECTRON SPECTROSCOPES;

HAFNIUM COMPOUNDS;

EID: 59349097971     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3070660     Document Type: Article

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