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Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

Effect of non-lattice oxygen on ZrO2-based resistive switching memory

(4) Lin, Chun Chieh a Chang, Yi Peng a Lin, Huei Bo a Lin, Chu Hsuan a

a NATIONAL DONG HWA UNIVERSITY (Taiwan)

Author keywords

Non lattice oxygen; Resistive switching mechanism; Resistive switching memory; Retention time

Indexed keywords

ALUMINUM COMPOUNDS; OSCILLATORS (ELECTRONIC); OXYGEN; PLATINUM COMPOUNDS; ZIRCONIA;

CONDUCTIVE FILAMENTS; LARGE CURRENT; LATTICE OXYGEN; NON-VOLATILE MEMORY; RESISTIVE SWITCHING BEHAVIORS; RESISTIVE SWITCHING MECHANISMS; RESISTIVE SWITCHING MEMORY; RETENTION TIME;

SWITCHING;

EID: 84859412900 PISSN: 19317573 EISSN: 1556276X Source Type: Journal
DOI: 10.1186/1556-276X-7-187 Document Type: Article

Times cited : (50)

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