Damage-free metal-oxide-semiconductor gate electrode patterning on thin HfSiON film using neutral beam etching

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 4, 2006, Pages 1414-1420

  Noda, Shuichi ^a   Ozaki, Takuya ^a   Samukawa, Seiji ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED PARTICLES; DIELECTRIC FILMS; DIELECTRIC MATERIALS; ELECTRODES; MOS DEVICES; PLASMA ETCHING; X RAY PHOTOELECTRON SPECTROSCOPY;

CHARGE FLUX; GATE ELECTRODE ETCHING; HFSION FILM; NEUTRAL BEAM ETCHING;

SEMICONDUCTING FILMS;

EID: 33745447675     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2189264     Document Type: Article

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