SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages 0110241-0110249

Poly-Si/TiN/Mo/HfO2 gate stack etching in high-density plasmas

(4) Luere, O a Pargon, E a Vallier, L a Joubert, O a

a CEA LETI (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BROMINE COMPOUNDS; CHLORINE COMPOUNDS; ETCHING; GASES; HAFNIUM OXIDES; ION BOMBARDMENT; LOGIC GATES; MOLYBDENUM; PASSIVATION; SILICON; SILICON COMPOUNDS; SULFUR HEXAFLUORIDE; TITANIUM COMPOUNDS; YTTRIUM COMPOUNDS;

BIAS POWER; CHEMICAL ETCHING; GATE STACKS; HALOGEN-BASED PLASMAS; HIGH DENSITY PLASMAS; PASSIVATION LAYER; PLASMA GAS; REDEPOSITION;

NITROGEN COMPOUNDS;

EID: 79551645536 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3533939 Document Type: Conference Paper

Times cited : (4)

References (30)

1
- 4344623534
- 0040-6090, 10.1016/j.tsf.2004.05.039
- Y. C. Yeo, Thin Solid Films 0040-6090 462-463, 34 (2004). 10.1016/j.tsf.2004.05.039
- (2004) Thin Solid Films , vol.462-463 , pp. 34
- Yeo, Y.C.¹

2
- 0034505494
- 2 multilayers
- DOI 10.1016/S0040-6090(00)01419-X
- F. -P. Wang, L. -S. Cheng, P. -X. Wang, and K. -Q. Lu, Thin Solid Films 0040-6090 379, 308 (2000). 10.1016/S0040-6090(00)01419-X (Pubitemid 32071408)
- (2000) Thin Solid Films , vol.379 , Issue.1-2 , pp. 308-312
- Wang, F.-P.¹ Cheng, L.-S.² Wang, P.-X.³ Lu, K.-Q.⁴

3
- 34247166249
- 2 high-κ dielectrics
- DOI 10.1016/j.microrel.2007.01.002, PII S0026271407000078
- S. Abermann, J. Efavi, G. Sjöblom, M. Lemme, J. Olsson, and E. Bertagnolli, Microelectron. Reliab. 0026-2714 47, 536 (2007). 10.1016/j.microrel.2007.01.002 (Pubitemid 46602374)
- (2007) Microelectronics Reliability , vol.47 , Issue.4-5 SPEC. ISS. , pp. 536-539
- Abermann, S.¹ Efavi, J.² Sjoblom, G.³ Lemme, M.⁴ Olsson, J.⁵ Bertagnolli, E.⁶

4
- 4243635865
- 0163-1918.
- Q. Lu, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2000, 641.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2000 , pp. 641
- Lu, Q.¹

5
- 0035525694
- 1099-0062, 10.1149/1.1402497
- P. Ranade, H. Takeuchi, T. -J. King, and C. Hu, Electrochem. Solid-State Lett. 1099-0062 4, G85 (2001). 10.1149/1.1402497
- (2001) Electrochem. Solid-State Lett. , vol.4 , pp. 85
- Ranade, P.¹ Takeuchi, H.² King, T.-J.³ Hu, C.⁴

6
- 0242509076
- 1071-1023, 10.1116/1.1612517
- J. Tonotani, T. Iwamoto, F. Sato, K. Hattori, S. Ohmi, and H. Iwai, J. Vac. Sci. Technol. B 1071-1023 21, 2163 (2003). 10.1116/1.1612517
- (2003) J. Vac. Sci. Technol. B , vol.21 , pp. 2163
- Tonotani, J.¹ Iwamoto, T.² Sato, F.³ Hattori, K.⁴ Ohmi, S.⁵ Iwai, H.⁶

7
- 31044439269
- Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma
- DOI 10.1116/1.1927536
- W. S. Hwang, J. Chen, W. J. Yoo, and V. Bliznetsov, J. Vac. Sci. Technol. A 0734-2101 23, 964 (2005). 10.1116/1.1927536 (Pubitemid 43119234)
- (2005) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.23 , Issue.4 , pp. 964-970
- Hwang, W.S.¹ Chen, J.² Yoo, W.J.³ Bliznetsov, V.⁴

8
- 34249888719
- Poly- SiTiNHf O2 gate stack etching in high-density plasmas
- DOI 10.1116/1.2732736
- A. Le Gouil, O. Joubert, G. Cunge, T. Chevolleau, and L. Vallier, J. Vac. Sci. Technol. B 1071-1023 25, 767 (2007). 10.1116/1.2732736 (Pubitemid 46872364)
- (2007) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.25 , Issue.3 , pp. 767-778
- Le Gouil, A.¹ Joubert, O.² Cunge, G.³ Chevolleau, T.⁴ Vallier, L.⁵ Chenevier, B.⁶ Matko, I.⁷

9
- 0001494344
- 1071-1023, 10.1116/1.584218
- D. S. Fischl and D. W. Hess, J. Vac. Sci. Technol. B 1071-1023 6, 1577 (1988). 10.1116/1.584218
- (1988) J. Vac. Sci. Technol. B , vol.6 , pp. 1577
- Fischl, D.S.¹ Hess, D.W.²

10
- 0022659706
- 0021-4922, 10.1143/JJAP.25.L96
- Y. Kuriyama, M. Suzuki, and M. Hirayama, Jpn. J. Appl. Phys., Part 2 0021-4922 25, L96 (1986). 10.1143/JJAP.25.L96
- (1986) Jpn. J. Appl. Phys., Part 2 , vol.25 , pp. 96
- Kuriyama, Y.¹ Suzuki, M.² Hirayama, M.³

11
- 0001563375
- Evaluation of plasma charging damage during polysilicon gate etching process in a decoupled plasma source reactor
- DOI 10.1116/1.581165
- S. Ma, M. Jain, and J. D. Chinn, J. Vac. Sci. Technol. A 0734-2101 16, 1440 (1998). 10.1116/1.581165 (Pubitemid 128091411)
- (1998) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.16 , Issue.3 , pp. 1440-1443
- Ma, S.¹ Jain, M.² Chinn, J.D.³

12
- 0036026394
- 4 chemistries during silicon etching in industrial high-density plasmas
- DOI 10.1116/1.1511219
- G. Cunge, R. L. Inglebert, O. Joubert, L. Vallier, and N. Sadeghi, J. Vac. Sci. Technol. B 1071-1023 20, 2137 (2002). 10.1116/1.1511219 (Pubitemid 35354130)
- (2002) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.20 , Issue.5 , pp. 2137-2148
- Cunge, G.¹ Inglebert, R.L.² Joubert, O.³ Vallier, L.⁴ Sadeghi, N.⁵

13
- 3142519917
- 0734-2101, 10.1116/1.1697484
- O. Joubert, G. Cunge, B. Pelissier, L. Vallier, M. Kogelschatz, and E. Pargon, J. Vac. Sci. Technol. A 0734-2101 22, 553 (2004). 10.1116/1.1697484
- (2004) J. Vac. Sci. Technol. A , vol.22 , pp. 553
- Joubert, O.¹ Cunge, G.² Pelissier, B.³ Vallier, L.⁴ Kogelschatz, M.⁵ Pargon, E.⁶

14
- 0037274174
- 1071-1023, 10.1116/1.1563255
- L. Vallier, J. Foucher, X. Detter, E. Pargon, O. Joubert, G. Cunge, and T. Lill, J. Vac. Sci. Technol. B 1071-1023 21, 904 (2003). 10.1116/1.1563255
- (2003) J. Vac. Sci. Technol. B , vol.21 , pp. 904
- Vallier, L.¹ Foucher, J.² Detter, X.³ Pargon, E.⁴ Joubert, O.⁵ Cunge, G.⁶ Lill, T.⁷

15
- 31144441052
- Towards a controlled patterning of 10 nm silicon gates in high density plasmas
- DOI 10.1116/1.2008272
- E. Pargon, M. Darnon, O. Joubert, T. Chevolleau, L. Vallier, L. Mollard, and T. Lill, J. Vac. Sci. Technol. B 1071-1023 23, 1913 (2005). 10.1116/1.2008272 (Pubitemid 43127153)
- (2005) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.23 , Issue.5 , pp. 1913-1923
- Pargon, E.¹ Darnon, M.² Joubert, O.³ Chevolleau, T.⁴ Vallier, L.⁵ Mollard, L.⁶ Lill, T.⁷

16
- 0003998388
- (CRC, Boca Raton).
- D. R. Lide, Handbook of Chemistry and Physics (CRC, Boca Raton, 2008).
- (2008) Handbook of Chemistry and Physics
- Lide, D.R.¹

17
- 0003459529
- (Perkin-Elmer, Eden Prairie).
- J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-Ray Photoelectron Spectroscopy (Perkin-Elmer, Eden Prairie, 1992).
- (1992) Handbook of X-Ray Photoelectron Spectroscopy
- Moulder, J.F.¹ Stickle, W.F.² Sobol, P.E.³ Bomben, K.D.⁴

18
- 0026371472
- 0142-2421, 10.1002/sia.740171304
- S. Tanuma, C. J. Powell, and D. R. Penn, Surf. Interface Anal. 0142-2421 17, 911 (1991). 10.1002/sia.740171304
- (1991) Surf. Interface Anal. , vol.17 , pp. 911
- Tanuma, S.¹ Powell, C.J.² Penn, D.R.³

19
- 0000005309
- 0021-8979, 10.1063/1.371454
- S. F. Yoon, Q. F. Huang, Rusli, H. Yang, J. Ahn, Q. Zhang, C. Blomfield, B. Tielsch, and L. Y. C. Tan, J. Appl. Phys. 0021-8979 86, 4871 (1999). 10.1063/1.371454
- (1999) J. Appl. Phys. , vol.86 , pp. 4871
- Yoon, S.F.¹ Huang, Q.F.² Rusli³ Yang, H.⁴ Ahn, J.⁵ Zhang, Q.⁶ Blomfield, C.⁷ Tielsch, B.⁸ Tan, L.Y.C.⁹

20
- 0012813810
- 1071-1023, 10.1116/1.583618
- S. -J. Park, C. -P. Sun, and R. J. Purtell, J. Vac. Sci. Technol. B 1071-1023 5, 1372 (1987). 10.1116/1.583618
- (1987) J. Vac. Sci. Technol. B , vol.5 , pp. 1372
- Park, S.-J.¹ Sun, C.-P.² Purtell, R.J.³

21
- 33644546062
- 0734-2101, 10.1116/1.2167972
- K. Kurihara, A. Egami, and M. Nakamura, J. Vac. Sci. Technol. A 0734-2101 24, 286 (2006). 10.1116/1.2167972
- (2006) J. Vac. Sci. Technol. A , vol.24 , pp. 286
- Kurihara, K.¹ Egami, A.² Nakamura, M.³

22
- 31044441569
- Silicon etch by fluorocarbon and argon plasmas in the presence of fluorocarbon films
- DOI 10.1116/1.2049304
- J. J. V́gh, D. Humbird, and D. B. Graves, J. Vac. Sci. Technol. A 0734-2101 23, 1598 (2005). 10.1116/1.2049304 (Pubitemid 43119396)
- (2005) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.23 , Issue.6 , pp. 1598-1604
- Vegh, J.J.¹ Humbird, D.² Graves, D.B.³

23
- 0003828439
- (Wiley, New York).
- D. Briggs and M. P. Seah, Practical Surface Analysis (Wiley, New York, 1993).
- (1993) Practical Surface Analysis
- Briggs, D.¹ Seah, M.P.²

24
- 0000180230
- 0020-1669, 10.1021/ic50147a013
- S. O. Grim and L. J. Matienzo, Inorg. Chem. 0020-1669 14, 1014 (1975). 10.1021/ic50147a013
- (1975) Inorg. Chem. , vol.14 , pp. 1014
- Grim, S.O.¹ Matienzo, L.J.²

25
- 0347537766
- 1381-1169, 10.1016/S1381-1169(03)00538-7
- R. B. Watson, S. L. Lashbrook, and U. S. Ozkan, J. Mol. Catal. A: Chem. 1381-1169 208, 233 (2004). 10.1016/S1381-1169(03)00538-7
- (2004) J. Mol. Catal. A: Chem. , vol.208 , pp. 233
- Watson, R.B.¹ Lashbrook, S.L.² Ozkan, U.S.³

26
- 0042609367
- 0033-4545, 10.1351/pac199668051071
- V. M. Donnelly, I. P. Herman, C. C. Cheng, and K. V. Guinn, Pure Appl. Chem. 0033-4545 68, 1071 (1996). 10.1351/pac199668051071
- (1996) Pure Appl. Chem. , vol.68 , pp. 1071
- Donnelly, V.M.¹ Herman, I.P.² Cheng, C.C.³ Guinn, K.V.⁴

27
- 0342855042
- 0161-6374.
- S. Vallon, L. Vallier, and O. Joubert, Proc.-Electrochem. Soc. 0161-6374 97, 168 (1997).
- (1997) Proc.-Electrochem. Soc. , vol.97 , pp. 168
- Vallon, S.¹ Vallier, L.² Joubert, O.³

28
- 0026628527
- 0013-4651, 10.1149/1.2069179
- G. C. H. Zau and H. H. Sawin, J. Electrochem. Soc. 0013-4651 139, 250 (1992). 10.1149/1.2069179
- (1992) J. Electrochem. Soc. , vol.139 , pp. 250
- Zau, G.C.H.¹ Sawin, H.H.²

29
- 34249870836
- 4 plasma treatment
- DOI 10.1149/1.2733873
- W. C. Wu, C. S. Lai, J. C. Wang, J. H. Chen, M. W. Ma, and T. S. Chao, J. Electrochem. Soc. 0013-4651 154, H561 (2007). 10.1149/1.2733873 (Pubitemid 46872265)
- (2007) Journal of the Electrochemical Society , vol.154 , Issue.7
- Wu, W.C.¹ Lai, C.S.² Wang, J.C.³ Chen, J.H.⁴ Ma, M.W.⁵ Chao, T.S.⁶

30
- 85067747398
- 1071-1023 (to be published).
- O. Luere, E. Pargon, L. Vallier, B. Pelissier, and O. Joubert, J. Vac. Sci. Technol. B 1071-1023 (to be published).
- J. Vac. Sci. Technol. B
- Luere, O.¹ Pargon, E.² Vallier, L.³ Pelissier, B.⁴ Joubert, O.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.